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Three electrically isolated high-speed switching diodes, encapsulated in very small SMD plastic packages.
BAS16VV Maximum Ratings
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse voltage
-
100
V
VR
continuous reverse voltage
-
100
V
IF
continuous forward current
-
200
mA
IFRM
repetitive peak forward current
-
450
mA
IFSM
non-repetitive peak forward curren
square wave [1]
-
tp = 1 s
-
4.5
A
tp = 1 ms
-
1
A
tp = 1 s
-
0.5
A
Ptot
total power dissipation
-
SOT666
Tamb25 [2][3]
-
180
mW
SOT363
Tsp = 85 [4]
-
250
mW
Tj
junction temperature
-
150
Tamb
ambient temperature
-65
+150
Tstg
storage temperature
-65
+150
[1] Tj = 25 prior to surge; see Figure 2. [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [3] Single diode loaded. [4] Solder points at pins 2, 3, 5 and 6.
BAS16VV Features
· Very small SMD plastic packages · High-speed switching · Three electrically isolated diodes · Low capacitance.
BAS16VV Typical Application
· General purpose switching in surface mounted circuits.