BAS40WS, BAS416115, BAS45A Selling Leads, Datasheet
MFG:PANJIT Package Cooled:0.2A/40V SOD-323 D/C:09+/10+
BAS40WS, BAS416115, BAS45A Datasheet download
Part Number: BAS40WS
MFG: PANJIT
Package Cooled: 0.2A/40V SOD-323
D/C: 09+/10+
BAS40WS, BAS416115, BAS45A
- Table of contents:
Info of BAS40WS
Info of BAS416115
Info of BAS45A
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About BAS40WS
PDF/DataSheet Download
Datasheet: BAS40WS
File Size: 126476 KB
Manufacturer: 江苏长电
Download : Click here to Download
About BAS 125W
PDF/DataSheet Download
Datasheet: BAS 125W
File Size: 99356 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
About BAS45A
PDF/DataSheet Download
Datasheet: BAS45A
File Size: 35011 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BAS40WS Maximum Ratings
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
| Parameter | Symbol | Limits | Unit |
| Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
40 | V |
| Forward Continuous Current | IF | 200 | mA |
| Peak forward surge current @<1.0s | IFSM | 600 | mA |
| Power Dissipation | Pd | 200 | mW |
| Thermal Resistance Junction to Ambient | RJA | 625 | K/W |
| Storage temperature | TSTG | -55 to +150 |
BAS40WS Features
`LOW Turn-on Voltage
`Fast Switching -
`PN Junction Guard for Transient and ESD Protection
`Designed for Surface Mount Application
`Plastic Material UL Recognition Flammability Classification 94V-O
`Fast Switching -
`PN Junction Guard for Transient and ESD Protection
`Designed for Surface Mount Application
`Plastic Material UL Recognition Flammability Classification 94V-O
BAS45A General Description
Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package.
BAS45A Maximum Ratings
| SYMBOL |
PARAMETER |
CONDITIONS | MIN. | MAX. | UNIT |
| VRRM | Repetitive peak reverse voltage | - | 125 |
V | |
| VR | continuous reverse voltage | - | 125 |
V | |
| IF | Continuous forward current | see Fig.2;note 1 | - | 250 |
mA |
| IFRM | repetitive peak forward current | - | 625 |
mA | |
| IFSM | non-repetitive peak forward current | square wave; Tj = 25 prior to surge; see Fig.4 t = 1 s t = 1 ms t = 1 s |
- - - |
4 1 0.5 |
A A A |
| Ptot | total power dissipation | Tamb = 25 | - | 300 |
mW |
| Tstg | storage temperature | -65 | +175 | ||
| TJ | junction temperature | - | 175 |
1. Device mounted on a printed-circuit board without metallization pad.
BAS45A Features
` Continuous reverse voltage:max. 125 V
` Repetitive peak forward current:max. 625 mA
` Low reverse current: max. 1 nA
` Switching time: typ. 1.5 s.
` Repetitive peak forward current:max. 625 mA
` Low reverse current: max. 1 nA
` Switching time: typ. 1.5 s.
BAS45A Typical Application
· Low leakage current applications
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