BAS521, BAS521 115, BAS521115 Selling Leads, Datasheet
MFG:NXP Package Cooled:2009+ROHS D/C:63000
BAS521, BAS521 115, BAS521115 Datasheet download

Part Number: BAS521
MFG: NXP
Package Cooled: 2009+ROHS
D/C: 63000
MFG:NXP Package Cooled:2009+ROHS D/C:63000
BAS521, BAS521 115, BAS521115 Datasheet download

MFG: NXP
Package Cooled: 2009+ROHS
D/C: 63000
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
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PDF/DataSheet Download
Datasheet: BAS521
File Size: 61214 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BAS 125W
File Size: 99356 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BAS 125W
File Size: 99356 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
The BAS521 is a high-voltage switching diode fabricated in planar technology and encapsulated in an ultra small SOD523 (SC-79) plastic SMD package.
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VR | continuous reverse voltage | - | 300 | V | |
| VRRM | repetitive peak reverse voltage | - | 300 | V | |
| IF | continuous forward current | Ts 90; note 1 | - | 250 | mA |
| IFRM | repetitive peak forward current | tp = 1 ms; = 0.25 | - | 1 | A |
| IFSM | non-repetitive peak forward curren | tp = 1 s; square wave; Tj = 25 prior to surge |
- | 4.5 | A |
| Ptot | total power dissipation | Ts 90; note 1 | - | 500 | mW |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 | ||
| Tamb | operating ambient temperature | -65 | +150 |

