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The BAW62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
BAW62 Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
-
75
V
VR
continuous reverse voltage
-
75
V
IF
continuous forward current
see Fig.2; note 1
-
250
mA
IFRM
repetitive peak forward current
-
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 ms
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
Ptot
total power dissipation
Tamb = 25 °C; note 1
-
350
mW
Tstg
storage temperature
-65
+200
°C
Tj
junction temperature
-
200
°C
Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
BAW62 Features
· Hermetically sealed leaded glass SOD27 (DO-35) package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 75 V · Repetitive peak forward current: max. 450 mA