BCR169W, BCR169WE6327, BCR16A Selling Leads, Datasheet
MFG:SIE Package Cooled:SOT-23 D/C:09+
BCR169W, BCR169WE6327, BCR16A Datasheet download
Part Number: BCR169W
MFG: SIE
Package Cooled: SOT-23
D/C: 09+
MFG:SIE Package Cooled:SOT-23 D/C:09+
BCR169W, BCR169WE6327, BCR16A Datasheet download
MFG: SIE
Package Cooled: SOT-23
D/C: 09+
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PDF/DataSheet Download
Datasheet: BCR169W
File Size: 508445 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BCR08AM-14
File Size: 27649 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BCR16A
File Size: 90984 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
Parameter | Symbol |
Values |
Unit |
Collector-emitter voltage |
VCEO |
50 |
V
|
Collector-base voltage |
VCBO |
50 | |
Emitter-base voltage |
VEBO |
5 | |
Input on Voltage |
Vi(on) |
15 | |
DC collector current |
IC |
100 |
mA |
Total power dissipation- BCR169, Ts 102°C BCR169F, Ts 128°C BCR169L3, Ts 135°C BCR169S, Ts 115°C BCR169T, Ts 109°C BCR169U, Ts 118°C BCR169W, Ts 124°C SEMB3, Ts 75°C |
Ptot |
200 250 250 250 250 250 250 250 |
mW |
Junction temperature |
Tj |
150 |
oC |
Storage temperature |
Tstg |
-65 ... +150 |
Symbol |
Parameter |
Voltage class |
Unit | |
8 |
10 | |||
VDRM | Repetitive peak off-state voltage 1 |
400 |
500 |
V |
VDSM | Non-repetitive peak off-state voltage 1 |
600 |
700 |
V |
Symbol | Parameter | Conditions | Ratings | Unit | ||
IT(RMS) | RMS on-state current | Commercial power frequency, sine full wave 360° | BCR16A, B, C | Tc=99°C | 16 | A |
BCR16E | Tb=71°C | |||||
ITSM | Surge on-state current | 60Hz sinewave 1 full cycle, peak value, non-repetitive | 170 | A | ||
I2t | I2t for fusing | Value corresponding to 1 cycle of half wave 60Hz, surge on-state current | 121 | A2s | ||
PGM | Peak gate power dissipation | 5 | W | |||
PG (AV) | Average gate power dissipation | 0.5 | W | |||
VGM | Peak gate voltage | 10 | V | |||
IGM | Peak gate current | 2 | A | |||
Tj | Junction temperature | 20 ~ +125 | oC | |||
- | Weight | Typical value | 2.0 | g |