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·With TO-126 package ·Complement to type BD176/178 /180
BD179 Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
BD175
Open emitter
45 60 80
V
BD177
BD179
VCEO
Collector -emitter voltage
BD175
Open base
45 60 80
V
BD177
BD179
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
3
A
ICM
Collector current-Pulse
7
A
PD
Collector power dissipation
TC=25
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
BD179 Typical Application
·For medium power linear and switching applications
BD180 Parameters
Technical/Catalog Information
BD180
Vendor
ON Semiconductor
Category
Discrete Semiconductor Products
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
3A
Power - Max
30W
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic
800mV @ 100mA, 1A
Frequency - Transition
3MHz
Current - Collector Cutoff (Max)
-
Mounting Type
Through Hole
Package / Case
TO-225-3
Packaging
Bulk
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
BD180 BD180
BD181 Maximum Ratings
Symbol
Ratings
Value
Unit
VCBO
Collector-Base Voltage
BD181
55
V
BD182
70
BD183
85
VCEO
Collector-Emitter Voltage
BD181
45
V
BD182
60
BD183
80
VCBR
Collector-EmitterVoltage
RBE=100
BD181
55
V
BD182
70
BD183
85
VCEX
Collector-EmitterVoltage
VBE=-1.5 V
BD181
55
V
BD182
70
BD183
85
VEBO
Emitter-Base Voltage
BD181
7.0
V
BD182
BD183
IC
Collector Current
BD181
15
A
BD182
BD183
IB
Base Current
BD181
7.0
A
BD182
BD183
PT
Power Dissipation
@ TC =25°C
BD181
150
Watts
BD182
BD183
BD181 Typical Application
BD181, BD182 and BD183 are silicon NPN transistors intended for a wide variety of high power applications. Typical applications include power switching circuits, audio amplifiers, solenoid drivers, and series and shunt regulators.