BDW52B, BDW52C, BDW53 Selling Leads, Datasheet
MFG:MOTOROLA Package Cooled:TO-3 D/C:07+
BDW52B, BDW52C, BDW53 Datasheet download
Part Number: BDW52B
MFG: MOTOROLA
Package Cooled: TO-3
D/C: 07+
MFG:MOTOROLA Package Cooled:TO-3 D/C:07+
BDW52B, BDW52C, BDW53 Datasheet download
MFG: MOTOROLA
Package Cooled: TO-3
D/C: 07+
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PDF/DataSheet Download
Datasheet: BDW52B
File Size: 54994 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
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PDF/DataSheet Download
Datasheet: BDW52C
File Size: 54994 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
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PDF/DataSheet Download
Datasheet: BDW53
File Size: 106716 KB
Manufacturer: POINN [Power Innovations Limited]
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Description of the BDW52C are:(1)with TO-3 package;(2)complement to type BDW51C;(3)excellent safe operating area.
The absolute maximum ratings of the BDW52C can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the conditions is open emitter,the value is -100,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the conditions is open base,the value is -100,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the conditions is open collector,the value is -5,the unit is V;(4):the symbol is IC,the parameter is collector current,the value is -15,the unit is A;(5):the symbol is ICM,the parameter is collector current-peak,the value is -20,the unit is A;(6):the symbol is IB,the parameter is base current,the value is -7,the unit is A;(7):the symbol is PC,the parameter is collector power dissipation,the conditions is Tc=25,the value is 125,the unit is W;(8):the symbol is Tj,the parameter is junction temperature,the value is 200,the unit is ;(9):the symbol is Tstg,the parameter is storage temperature,the value is -65 to 200,the unit is ;(10):the symbol is Rth j-c,the parameter is thermal resistance junction to case,the Max. is 1.4,the unit is /W.
RATING | SYMBOL | VALUE | UNIT | |
Collector-base voltage (IE = 0) |
BDW53 BDW53A BDW53B BDW53C BDW53D |
VCBO | 45 60 80 100 120 |
V |
Collector-emitter voltage (IB = 0) |
BDW53 BDW53A BDW53B BDW53C BDW53D |
VCEO | 45 60 80 100 120 |
V |
Emitter-base voltage | VEBO | 5 | V | |
Continuous collector current | IC | 4 | A | |
Continuous base current | IB | 50 | mA | |
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) | Ptot | 40 | W | |
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) | Ptot | 2 | W | |
Unclamped inductive load energy (see Note 4) | 1/2LIC2 | 25 | mJ | |
Operating junction temperature range | Tj | -65 to +150 | °C | |
Storage temperature range | Tstg | -65 to +150 | °C | |
Lead temperature 3.2 mm from case for 10 seconds | TL | -65 to +150 | °C |