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BDX54CTU, BDX54E, BDX54F

Table of contents:
Info of BDX54CTU
Info of BDX54E
Info of BDX54F

BDX54CTU, BDX54E, BDX54F Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:02

BDX54CTU, BDX54E, BDX54F Datasheet download

Five Points

Part Number: BDX54CTU

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 02

Description: TRANSISTOR PNP 100V 8A TO-220

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BDX54CTU Parameters

Technical/Catalog Information	BDX54CTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	8A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 3A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BDX54CTU BDX54CTU

BDX54F General Description

The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F.

BDX54F Maximum Ratings

Symbol	Parameter		Value	Unit
		NPN	BDX53F
		PNP	BDX54F
V_CBO	Collector-Base Voltage (I_E = 0)		160	V
V_CEO	Collector-Emitter Voltage (I_B = 0)		160	V
V_EBO	Emitter-Base Voltage (I_C = 0)		5	V
I_C	Collector Current		8	A
I_CM	Collector Peak Current		12	A
I_B	Base Current		0.2	A
P_tot	Total Dissipation at T_c 25		60	W
T_stg	Storage Temperature		-65 to 150
T_j	Max. Operating Junction Temperature		150

BDX54F Features

*STMicroelectronics PREFERRED SALESTYPES
*COMPLEMENTARY PNP - NPN DEVICES
*MONOLITHIC DARLINGTON CONFIGURATION
*INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

BDX54F Typical Application

*LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

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