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BF2040 E6814, BF2040/E6327, BF2040E

BF2040 E6814, BF2040/E6327, BF2040E Selling Leads, Datasheet

MFG:INFINEON  Package Cooled:N/A  D/C:07/08+

BF2040 E6814, BF2040/E6327, BF2040E Picture

BF2040 E6814, BF2040/E6327, BF2040E Datasheet download

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Part Number: BF2040 E6814

 

MFG: INFINEON

Package Cooled: N/A

D/C: 07/08+

 

 

 
 
 
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About BF200

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Datasheet: BF200

File Size: 467053 KB

Manufacturer: ETC [ETC]

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BF2040/E6327 Suppliers

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  • BF2030

  • Vendor: Infineon Pack: SOT D/C: 05+& Qty: 3000  Adddate: 2024-03-28
  • Inquire Now
  • SHENZHEN BINHAI INDUSTRY CO.,LTD   China
    Contact: Mr.chenrongjia   MSN:wind.brsmq@hotmail.com
    Tel: 086-0755-83214027
    Fax: 086-0755-83227110
    (0)

About BF200

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Datasheet: BF200

File Size: 467053 KB

Manufacturer: ETC [ETC]

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BF2040E Suppliers

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  • BF2040E6814

  • Vendor: Infineon Qty: 6000 Note: "Original spot, do not lie to you  Adddate: 2024-03-28
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  • GANGGUO ELECTRONICS(HK)LIMITED   China
    Contact: Mr.JianHong CHEN   MSN:szsxydz@hotmail.com
    Tel: 86-0755-82239433
    Fax: 86-0755-82235169
    (3)

About BF200

PDF/DataSheet Download

Datasheet: BF200

File Size: 467053 KB

Manufacturer: ETC [ETC]

Download : Click here to Download

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BF2040 E6814 General Description

The BF2040 E6814 is a kind of silicon N-channel MOSFET tetrode which has two unique features:(1) for low noise,high gain controlled input stages up to 1 GHz;(2)operating voltage is 5 V.

There are some maximum ratings about it.(1):drain-source voltage(VDS) is 8 V;(2):continuous drain current(ID) is 20 mA;(3):gate 1/ gate 2-source current(±IG1/2SM) is 10 mA;(4):total power dissipation(TS is not higher than 76°C,Ptot) is 200 mW;(5):storage temperature(Tstg) is -55°C to 150°C;(7):channel temperature(Tch) is 150°C.

Otherwise,there are some DC characteristics at Ta is 25°C,unless otherwise specified.(1):drain-source breakdown voltage(V(BR)DS) is 10 V min when ID is 20 A, VG1S is 0 V,VG2S is 0 V;(2):gate1-source breakdown voltage(+V(BR)G1SS) is 6 V  min and 15 V max when +/G1S is 10 V ,VG2S is 0 V,and VDS is 0 V;(3):gate2-source breakdown voltage(+V(BR)G2SS) is 6 V min and 15 V max when ±/G2S is 10 mA, VG1S is equal to VDS which is 0 V;(4):gate1-source leakage current(+/G1SS) is 50 nA max when VG1S is 5 V, VG2S is 0;(5):gate2-source leakage current(+/G2SS) is 50 nA max when VG2S is 5 V, VG1S is 0, VDS is 0;(6):drain-source current(IDSX) is 15 mA typ when VDS is 5 V, VG2S is 4 V, RG1 is 100 k;(7):gate2-source pinch-off voltage(VG2S(p)) is 0.3 V min and 0.7 V typ when VDS is 5 V and ID is 20 A.

 


 

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