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BFP620F, BFP620F E7764, BFP620FE6327

Table of contents:
Info of BFP620F
Info of BFP620F E7764
Info of BFP620FE6327

BFP620F, BFP620F E7764, BFP620FE6327 Selling Leads, Datasheet

MFG:Infineon Package Cooled:TSFP-4 D/C:08+

BFP620F, BFP620F E7764, BFP620FE6327 Picture

BFP620F, BFP620F E7764, BFP620FE6327 Datasheet download

Five Points

Part Number: BFP620F

MFG: Infineon

Package Cooled: TSFP-4

D/C: 08+

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BFP620F Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage T_A > 0 °C T_A 0 °C	V_CEO	2.3 2.1	V
Collector-emitter voltage	V_CES	7.5
Collector-base voltage	V_CBO	7.5
Emitter-base voltage	V_EBO	1.2
Collector current	I_C	80	mA
Base current	I_B	3	mA
Total power dissipation1) T_S 95°C	P_tot	185	W
Junction temperature	T_j	150	°C
Ambient temperature	T_A	-65 ... 150
Storage temperature	T_stg	-65 ... 150

1T_S is measured on the collector lead at the soldering point to the pcb

BFP620F Features

• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
G_ms = 21 dB at 1.8 GHz
G_ma = 10 dB at 6 GHz
• Gold metallization for extra high reliability

BFP620F E7764 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CEO	2.3	V
Collector-emitter voltage	V_CES	7.5
Collector-base voltage	V_CBO	7.5
Emitter-base voltage	V_EBO	1.2
Collector current	I_C	80	mA
Base current	I_B	3	mA
Total power dissipation¹⁾ T_S 96°C	P_tot	185	W
Junction temperature	T_j	150	°C
Ambient temperature	TA	-65 ... 150
Storage temperature	T_stg	-65 ... 150
Thermal Resistance
Parameter	Symbol	Value	Unit
Junction - soldering point²⁾	R_thJS	290	K/W

1T_S is measured on the collector lead at the soldering point to the pcb
2For calculation of R_thJAplease refer to Application Note Thermal Resistance

BFP620F E7764 Features

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