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BSR18B, BSR19, BSR19A

Table of contents:
Info of BSR18B
Info of BSR19
Info of BSR19A

BSR18B, BSR19, BSR19A Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT23 D/C:09+

BSR18B, BSR19, BSR19A Datasheet download

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Part Number: BSR18B

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT23

D/C: 09+

Description: IC AMP PNP 40V 200MA SOT-23

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BSR18B Parameters

Technical/Catalog Information	BSR18B
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	200mA
Power - Max	230mW
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSR18B BSR18B

BSR19 General Description

·NPN high-voltage transistor in a SOT23 plastic package.
·PNP complements: BSR20 and BSR20A.

BSR19 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage open emitter BSR30; BSR31 BSR33	open emitter		160 180	V V
V_CEO	collector-emitter voltage open base BSR30; BSR31 BSR33	open base		140 160	V V
V_EBO	emitter-base voltage	open collector		6	V
I_C	collector current (DC)			300	A
I_CM	peak collector current			600	A
I_BM	peak base current			100	mA
P_tot	total power dissipation	T_amb 25 °C; note 1		250	W
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature			150	°C
T_amb	operating ambient temperature		-65	+150	°C

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm ^2.For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook".

BSR19 Features

· Low current (max. 300 mA)
· High voltage (max. 160 V).

BSR19 Typical Application

· General purpose switching and amplification
· Especially used for telephony applications.

BSR19A General Description

·NPN high-voltage transistor in a SOT23 plastic package.
·PNP complements: BSR20 and BSR20A.

BSR19A Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage open emitter BSR30; BSR31 BSR33	open emitter		160 180	V V
V_CEO	collector-emitter voltage open base BSR30; BSR31 BSR33	open base		140 160	V V
V_EBO	emitter-base voltage	open collector		6	V
I_C	collector current (DC)			300	A
I_CM	peak collector current			600	A
I_BM	peak base current			100	mA
P_tot	total power dissipation	T_amb 25 °C; note 1		250	W
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature			150	°C
T_amb	operating ambient temperature		-65	+150	°C

BSR19A Features

· Low current (max. 300 mA)
· High voltage (max. 160 V).

BSR19A Typical Application

· General purpose switching and amplification
· Especially used for telephony applications.

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