BTA208X-600E74, BTA212, BTA212-500C Selling Leads, Datasheet
MFG:TO-220 Package Cooled:TO220 D/C:04+
BTA208X-600E74, BTA212, BTA212-500C Datasheet download
Part Number: BTA208X-600E74
MFG: TO-220
Package Cooled: TO220
D/C: 04+
MFG:TO-220 Package Cooled:TO220 D/C:04+
BTA208X-600E74, BTA212, BTA212-500C Datasheet download
MFG: TO-220
Package Cooled: TO220
D/C: 04+
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PDF/DataSheet Download
Datasheet: BTA04
File Size: 448545 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BTA212 series
File Size: 48896 KB
Manufacturer: Philips
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BTA212-500C
File Size: 24020 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
Passivated guaranteed commutationtriacs in a plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDRM | Repetitive peak off-state voltages | - | -600 600 |
V | |
IT(RMS) | RMS on-state current | full sine wave;Tmb 99 ˚C | - | 12 | A |
ITSM | Non-repetitive peak on-state current | full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms |
- - |
95 105 |
A A |
I2t | I2t for fusing | t = 10 ms | - | 45 | A2s |
dIT/dt | Repetitive rate of rise of on-state current after triggering | ITM = 1,5A; IG = 0.2 A; dIG/dt =0.2 A/µs |
- |
100 | A/µs |
IGM | Peak gate current | over any 20 ms period | - | 2 | A |
PGM | Peak gate power | - | 5 | W | |
PG(AV) | Average gate power | - | 0.5 | W | |
Tstg | Storage temperature | -40 | 150 | ˚C | |
Tj | Operating junction temperature | - | 125 | ˚C |
Glass passivated high commutationtriacs in a plastic envelope intended foruse in circuits wherehigh staticanddynamic dV/dt and high dI/dt canoccur. These devices will commutatethe full rated rms current at themaximum rated junction temperature,without the aid of a snubber.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | ||
VDRM | Repetitive peak off-state voltages |
- | -500 5001 |
-600 6001 |
-800 800 |
V | |
IT(RMS) | RMS on-state current | full sine wave; Ths 99 |
- | 12 | A | ||
ITSM | Non-repetitive peak on-state current |
full sine wave; Tj = 25 prior to surge t = 20 ms t = 16.7 ms |
- - |
95 105 |
A A | ||
I2t | I2t for fusing | t = 10 ms | - | 45 | A2s | ||
dIT/dt | Repetitive rate of rise of on-state current after triggering |
ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s |
100 | A/s | |||
IGM | Peak gate current | - | 2 | A | |||
VGM | Peak gate voltage | - | 5 | V | |||
PGM | Peak gate power | - | 5 | W | |||
PG(AV) | Average gate power | over any 20 ms period |
- | 0.5 | W | ||
Tstg | Storage temperature | -40 | 150 | ||||
Tj | Operating junction temperature |
- | 125 |