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BYG26J, BYG50D, BYG50G

Table of contents:
Info of BYG26J
Info of BYG50D
Info of BYG50G

BYG26J, BYG50D, BYG50G Selling Leads, Datasheet

MFG:VISHAY Package Cooled:04+ D/C:45000

BYG26J, BYG50D, BYG50G Datasheet download

Five Points

Part Number: BYG26J

MFG: VISHAY

Package Cooled: 04+

D/C: 45000

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BYG26J General Description

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-settingplastic.Thesmallrectangularpackagehas two J bent leads.

BYG26J Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage			600	V
VR	working reverse voltage			600	V
VRMS	root mean square voltage			420	V
IF(AV)	average forward current	averaged over any 20 ms period; Ttp =85 °C; see Fig.2		1	A
IFSM	non-repetitive peak forward current	t = 8.3 ms half sine wave; Tj =25 °C prior to surge; VR =VRRMmax		15	A
Tstg	storage temperature		-65	175
Tj	junction temperature	See Fig.3	-65	175

BYG26J Features

* Glass passivated
* High maximum operating temperature
* Ideal for surface mount automotive applications
* Low leakage current
* Excellent stability
* Guaranteed avalanche energy absorption capability
* UL 94V-O classified plastic package
* Shipped in 12 mm embossed tape
* Marking: cathode, date code, type code
* Easy pick and place.

BYG50D General Description

DO-214AC; SOD106 surface mountable package with glass passivated chip.The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG50D Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	repetitive peak reverse voltage			200	V
V_R	continuous reverse voltage			200	V
I _F(AV)	average forward current	averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3		2.1 1.0 0.7	A
I_FSM	non-repetitive peak forward current	t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax		30	A

E _RSM	non-repetitive peak reverse avalanche energy	L = 120 mH; Tj =Tj max prior to surge; inductive load switched off		10	mJ
Tstg	storage temperature		-65	+175
Tj	operating junction temperature		-65	+175

BYG50D Features

* Glass passivated
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Guaranteed avalanche energy absorption capability
* UL 94V-O classified plastic package
* Shipped in 12 mm embossed tape.

BYG50D Connection Diagram

BYG50G General Description

DO-214AC; SOD106 surface mountable package with glass passivated chip.The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG50G Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	repetitive peak reverse voltage			400	V
V_R	continuous reverse voltage			400	V
I _F(AV)	average forward current	averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3		2.1 1.0 0.7	A
I_FSM	non-repetitive peak forward current	t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax		30	A

E _RSM	non-repetitive peak reverse avalanche energy	L = 120 mH; Tj =Tj max prior to surge; inductive load switched off		10	mJ
Tstg	storage temperature		-65	+175
Tj	operating junction temperature		-65	+175

BYG50G Features

BYG50G Connection Diagram

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