BYG50J, BYG50K, BYG50M Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:DO-214AC D/C:09+
BYG50J, BYG50K, BYG50M Datasheet download
Part Number: BYG50J
MFG: PHILIPS
Package Cooled: DO-214AC
D/C: 09+
MFG:PHILIPS Package Cooled:DO-214AC D/C:09+
BYG50J, BYG50K, BYG50M Datasheet download
MFG: PHILIPS
Package Cooled: DO-214AC
D/C: 09+
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Datasheet: BYG50J
File Size: 42095 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BYG50K
File Size: 42095 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BYG50M
File Size: 42095 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 600 | V | ||
VR | continuous reverse voltage | 600 | V | ||
I F(AV) | average forward current | averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 |
2.1 |
A | |
IFSM | non-repetitive peak forward current | t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax |
30 |
A |
E RSM | non-repetitive peak reverse avalanche energy | L = 120 mH; Tj =Tj max prior to surge; inductive load switched off | 10 | mJ | |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | -65 | +175 |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 800 | V | ||
VR | continuous reverse voltage | 800 | V | ||
I F(AV) | average forward current | averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 |
2.1 |
A | |
IFSM | non-repetitive peak forward current | t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax |
30 |
A |
E RSM | non-repetitive peak reverse avalanche energy | L = 120 mH; Tj =Tj max prior to surge; inductive load switched off | 7 | mJ | |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | -65 | +175 |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 1000 | V | ||
VR | continuous reverse voltage | 1000 | V | ||
I F(AV) | average forward current | averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 |
2.1 |
A | |
IFSM | non-repetitive peak forward current | t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax |
30 |
A |
E RSM | non-repetitive peak reverse avalanche energy | L = 120 mH; Tj =Tj max prior to surge; inductive load switched off | 7 | mJ | |
Tstg | storage temperature | -65 | +175 | ||
Tj | operating junction temperature | -65 | +175 |