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BYG60D, BYG60G, BYG60J

Table of contents:
Info of BYG60D
Info of BYG60G
Info of BYG60J

BYG60D, BYG60G, BYG60J Selling Leads, Datasheet

MFG:Philips Package Cooled:SOD-6 D/C:09+

BYG60D, BYG60G, BYG60J Datasheet download

Five Points

Part Number: BYG60D

MFG: Philips

Package Cooled: SOD-6

D/C: 09+

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BYG60D General Description

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG60D Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	repetitive peak reverse voltage			200	V
V_R	continuous reverse voltage			200	V
I _F(AV)	average forward current	averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3		1.90 0.90 0.65	A
I_FSM	non-repetitive peak forward current	t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax		25	A

E _RSM	non-repetitive peak reverse avalanche energy	L = 120 mH; Tj =Tj max prior to surge; inductive load switched off		10	mJ
Tstg	storage temperature		-65	+175
Tj	operating junction temperature		-65	+175

BYG60D Features

* Glass passivated
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Guaranteed avalanche energy absorption capability
* UL 94V-O classified plastic package
* Shipped in 12 mm embossed tape.

BYG60D Connection Diagram

BYG60G General Description

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG60G Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	repetitive peak reverse voltage			400	V
V_R	continuous reverse voltage			400	V
I _F(AV)	average forward current	averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3		1.90 0.90 0.65	A
I_FSM	non-repetitive peak forward current	t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax		25	A

E _RSM	non-repetitive peak reverse avalanche energy	L = 120 mH; Tj =Tj max prior to surge; inductive load switched off		10	mJ
Tstg	storage temperature		-65	+175
Tj	operating junction temperature		-65	+175

BYG60G Features

BYG60G Connection Diagram

BYG60J General Description

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG60J Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	repetitive peak reverse voltage			600	V
V_R	continuous reverse voltage			600	V
I _F(AV)	average forward current	averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb =60 °C; see Fig.3		1.90 0.90 0.65	A
I_FSM	non-repetitive peak forward current	t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax		25	A

E _RSM	non-repetitive peak reverse avalanche energy	L = 120 mH; Tj =Tj max prior to surge; inductive load switched off		10	mJ
Tstg	storage temperature		-65	+175
Tj	operating junction temperature		-65	+175

BYG60J Features

BYG60J Connection Diagram

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