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BYG70D, BYG70G, BYG70J115

BYG70D, BYG70G, BYG70J115 Selling Leads, Datasheet

MFG:Philips  Package Cooled:SOD106  D/C:09+

BYG70D, BYG70G, BYG70J115 Picture

BYG70D, BYG70G, BYG70J115 Datasheet download

Five Points

Part Number: BYG70D

 

MFG: Philips

Package Cooled: SOD106

D/C: 09+

 

 

 
 
 
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About BYG70D

PDF/DataSheet Download

Datasheet: BYG70D

File Size: 36752 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BYG70G Suppliers

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About BYG70G

PDF/DataSheet Download

Datasheet: BYG70G

File Size: 36752 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About BYG10

PDF/DataSheet Download

Datasheet: BYG10

File Size: 61353 KB

Manufacturer: VISAY [Vishay Siliconix]

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BYG70D General Description

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG70D Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 200 V
VR continuous reverse voltage 200  V
I F(AV) average forward current averaged over any 20 ms
period; Ttp = 100 °C; see Fig.2
averaged over any 20 ms
period; Al2O3 PCB mounting (see
Fig.7); Tamb =60 °C; see Fig.3
averaged over any 20 ms
period; epoxy PCB mounting
(see Fig.7); Tamb =60 °C;
see Fig.3

1.00



0.53



0.39


A
IFSM non-repetitive peak forward current t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax

20
A
E RSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off 10 mJ
Tstg storage temperature -65 +175
Tj operating junction temperature -65 +175

BYG70D Features

* Glass passivated
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Guaranteed avalanche energy absorption capability
* UL 94V-O classified plastic package
* Shipped in 12 mm embossed tape.

BYG70D Connection Diagram

BYG70G General Description

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG70G Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 400 V
VR continuous reverse voltage 400  V
I F(AV) average forward current averaged over any 20 ms
period; Ttp = 100 °C; see Fig.2
averaged over any 20 ms
period; Al2O3 PCB mounting (see
Fig.7); Tamb =60 °C; see Fig.3
averaged over any 20 ms
period; epoxy PCB mounting
(see Fig.7); Tamb =60 °C;
see Fig.3

400



0.53



0.39


A
IFSM non-repetitive peak forward current t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax

20
A
E RSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off 10 mJ
Tstg storage temperature -65 +175
Tj operating junction temperature -65 +175

BYG70G Features

* Glass passivated
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Guaranteed avalanche energy absorption capability
* UL 94V-O classified plastic package
* Shipped in 12 mm embossed tape.

BYG70G Connection Diagram

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