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BYG85B, BYG85B/T3, BYG90-20

BYG85B, BYG85B/T3, BYG90-20 Selling Leads, Datasheet

MFG:Philips  Package Cooled:SOD106  D/C:09+

BYG85B, BYG85B/T3, BYG90-20 Picture

BYG85B, BYG85B/T3, BYG90-20 Datasheet download

Five Points

Part Number: BYG85B

 

MFG: Philips

Package Cooled: SOD106

D/C: 09+

 

 

 
 
 
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About BYG85B

PDF/DataSheet Download

Datasheet: BYG85B

File Size: 68366 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BYG85B/T3 Suppliers

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About BYG10

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Datasheet: BYG10

File Size: 61353 KB

Manufacturer: VISAY [Vishay Siliconix]

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BYG90-20 Suppliers

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About BYG90-20

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Datasheet: BYG90-20

File Size: 37269 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BYG85B General Description

DO-214AC surface mountable package with glass passivated chip.

The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

BYG85B Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRSM non-repetitive peak reverse voltage   - 100 V
VR continuous reverse voltage   - 100 V
IF(AV) average forward current Ttp = 100 °C; averaged over any
20 ms period; see Figs 2 and 7
- 2.5 A
IF(AV) average forward current Tamb = 60 °C; AL2O3 PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
- 1.3 A
IF(AV) average forward current Tamb = 60 °C; epoxy PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
- 0.98 A
IFRM repetitive peak forward current Ttp = 100 °C; see Fig.3 - 23 A
IFRM repetitive peak forward current Tamb = 60 °C; AL2O3 PCB mounting;
see Fig.5
- 12 A
IFRM repetitive peak forward current Tamb = 60 °C; epoxy PCB mounting;
see Fig.6
- 8.5 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
- 35 A
Tstg storage temperature   -65 +175 °C
Tj junction temperature   -65 +150 °C

BYG85B Features

· Glass passivated
· High maximum operating temperature
· Low leakage current
· Excellent stability
· UL 94V-O classified plastic package
· Shipped in 12 mm embossed tape.

BYG90-20 General Description

The BYG 90-40 series consists of Schottky barrier rectifier diodes, fabricated in planar technology, and encapsulated in rectangular SOD106A plastic SMD packages.

BYG90-20 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VR continuous reverse voltage 20 V
VRRM repetitive peak reverse voltage

 

 

20

V
VRWM crest working reverse voltage 20 V
IF(AV) average forward current Tamb =65 °C; see Fig.2;
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
1 A
IRSM non-repetitive peak forward current  t = 8.3 s half sine wave;
JEDEC method
30 A
IRSM non-repetitive peak reverse current

tp = 100 s

 

0.5

A
Tstg storage temperature -65 125
Tj junction temperature

 

 

125

BYG90-20 Features

* Low switching losses
* Capability of absorbing very high surge current
* Fast recovery time
* Guard ring protected
* Plastic SMD package.

BYG90-20 Typical Application

* Low power switched-mode power supplies
* Rectifying
* Polarity protection.

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