CBCP68, CBCP69, CBCX69TR Selling Leads, Datasheet
MFG:CENTRAL Package Cooled:SOT223 D/C:2006
CBCP68, CBCP69, CBCX69TR Datasheet download
Part Number: CBCP68
MFG: CENTRAL
Package Cooled: SOT223
D/C: 2006
CBCP68, CBCP69, CBCX69TR
- Table of contents:
Info of CBCP68
Info of CBCP69
Info of CBCX69TR
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About CBCP68
PDF/DataSheet Download
Datasheet: CBCP68
File Size: 753409 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
About CBCP69
PDF/DataSheet Download
Datasheet: CBCP69
File Size: 753409 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
About CBC2012T100M
PDF/DataSheet Download
Datasheet: CBC2012T100M
File Size: 800722 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
CBCP68 General Description
The CENTRAL SEMICONDUCTOR CBCP68, CBCP69 types are complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.
CBCP68 Maximum Ratings
| SYMBOL | UNITS | ||
| Collector-Emitter Voltage | VCES | 25 | V |
| Collector-Emitter Voltage | VCEO | 20 | V |
| Emitter-Base Voltage | VEBO | 5.0 | V |
| Collector Current | IC | 1.0 | A |
| Collector Current-Peak | ICM | 2.0 | A |
| Base Current | IB | 100 | mA |
| Base Current Peak | IBM | 200 | mA |
| Power Dissipation | PD | 2.0 | W |
| Operating and Storage | |||
| Junction Temperature | TJ,Tstg | -65 to +150 | |
| Thermal Temperature | QJA | 62.5 | /W |
CBCP69 General Description
The CENTRAL SEMICONDUCTOR CBCP68, CBCP69 types are complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.
CBCP69 Maximum Ratings
| SYMBOL | UNITS | ||
| Collector-Emitter Voltage | VCES | 25 | V |
| Collector-Emitter Voltage | VCEO | 20 | V |
| Emitter-Base Voltage | VEBO | 5.0 | V |
| Collector Current | IC | 1.0 | A |
| Collector Current-Peak | ICM | 2.0 | A |
| Base Current | IB | 100 | mA |
| Base Current Peak | IBM | 200 | mA |
| Power Dissipation | PD | 2.0 | W |
| Operating and Storage | |||
| Junction Temperature | TJ,Tstg | -65 to +150 | |
| Thermal Temperature | QJA | 62.5 | /W |
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