MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO D/C:07+
DF10LC30S, DF10M, DF10M/45 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO
D/C: 07+
Description: DIODE BRIDGE 1000V 1.5A 4DIP
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PDF/DataSheet Download
Datasheet: DF10
File Size: 58860 KB
Manufacturer: LRC [Leshan Radio Company]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: DF10M
File Size: 63427 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: DF10
File Size: 58860 KB
Manufacturer: LRC [Leshan Radio Company]
Download : Click here to Download
| Technical/Catalog Information | DF10M |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Single Phase |
| Package / Case | 4-DIP |
| Packaging | Tube |
| Reverse Recovery Time (trr) | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - DC Forward (If) | 1.5A |
| Voltage - Peak Reverse (Max) | 1000V |
| Mounting Type | Through Hole |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | DF10M DF10M |
|
Characteristic |
Symbol |
DF |
DF |
DF |
DF |
DF |
DF |
DF |
Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRMM |
50 |
100 |
200 |
400 |
600 |
80 |
1000 |
V |
| RMS Reverse Voltage |
VRMS |
35 |
70 |
140 |
270 |
420 |
580 |
700 |
V |
|
Average Rectified Output Current |
IO |
1.0 |
A | ||||||
| Non-Repetitive Peak Forward SurgeCurrent, 8.3 ms single half-sine-wave superimposed on rated load(JEDEC method) |
IFSM |
50 |
A | ||||||
|
Forward Voltage (per element) |
VFM |
1.1 |
V | ||||||
| Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage (per element) @ TA = 125°C |
IRM |
10 |
A | ||||||
| I2t Rating for Fusing (t<8.3ms) |
I2t |
10.4 |
A2s | ||||||
| Typical Junction Capacitance per element (Note 1) |
Cj |
25 |
pF | ||||||
| Typical Thermal Resistance, Junction to Ambient (Note 2) |
R JA |
40 |
°C/W | ||||||
| Operating and Storage Temperature Range |
Tj, TSTG |
-65 to +150 |
°C | ||||||
Glass Passivated Die Construction
Diffused Junction
Low Forward Voltage Drop, High Current Capability
Surge Overload Rating to 50A Peak
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