DS05-20866-2E, DS05-20867-3E, DS05-20868-3E Selling Leads, Datasheet
MFG:NS Package Cooled:5000 D/C:00+
DS05-20866-2E, DS05-20867-3E, DS05-20868-3E Datasheet download
Part Number: DS05-20866-2E
MFG: NS
Package Cooled: 5000
D/C: 00+
DS05-20866-2E, DS05-20867-3E, DS05-20868-3E
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Info of DS05-20866-2E
Info of DS05-20867-3E
Info of DS05-20868-3E
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About DS001AKA
PDF/DataSheet Download
Datasheet: DS001AKA
File Size: 242576 KB
Manufacturer: SONY [Sony Corporation]
Download : Click here to Download
About DS001AKA
PDF/DataSheet Download
Datasheet: DS001AKA
File Size: 242576 KB
Manufacturer: SONY [Sony Corporation]
Download : Click here to Download
About DS001AKA
PDF/DataSheet Download
Datasheet: DS001AKA
File Size: 242576 KB
Manufacturer: SONY [Sony Corporation]
Download : Click here to Download
DS05-20868-3E General Description
The MBM29F002TC/BC is a 2 M-bit, 5.0 V-Only Flash memory organized as 256K bytes of 8 bits each. The MBM29F002TC/BC is offered in a 32-pin TSOP(I) and 32-pin PLCC packages. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F002TC/BC offers access times between 55 ns and 90 ns allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls.
The MBM29F002TC/BC is command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 V Flash or EPROM devices.
The MBM29F002TC/BC is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.
This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within 1 second (if already completely preprogrammed). The MBM29F002TC/BC is erased when shipped from the factory.
The MBM29F002TC/BC device also features hardware sector protection. This feature will disable both program and erase operations in any number of secotrs (0 through 6).
Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.
The device features single 5.0 V power supply operation for both read and program functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of DQ7, or by the Toggle Bit I feature on DQ6. Once the end of a program or erase cycle has been completed, the device automatically resets to the read mode.
The MBM29F002TC/BC also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.
Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29F002TC/BC memory electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the
EPROM programming mechanism of hot electron injection.
DS05-20868-3E Maximum Ratings
Storage Temperature ........................................................................................55°C to +125°C
Ambient Temperature with Power Applied ........................................................40°C to +85°C
Voltage with Respect to Ground All pins except A9, OE, and RESET (Note 1).2.0 V to +7.0 V
VCC (Note 1) ......................................................................................................2.0 V to +7.0 V
A9, OE, and RESET (Note 2) ............................................................................2.0 V to +13.5 V
Notes: 1. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, inputs may negative overshoot VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins is VCC +0.5 V. During voltage transitions, outputs may positive overshoot to VCC +2.0 V for periods up to 20 ns.
2. Minimum DC input voltage on A9, OE, and RESET pins are 0.5 V. During voltage transitions, A9, OE, and RESET pins may negative overshoot VSS to 2.0 V for periods of up to 20 ns. Maximum DC input voltage on A9, OE, and RESET are +13.0 V which may overshoot to 14.0 V for periods up to 20 ns. Voltage difference between input voltage and power supply. (VIN VCC) do not exceed 9 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
DS05-20868-3E Features
• Single 5.0 V read, write, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
• 32-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
32-pin PLCC (Package Suffix: PD)
• Minimum 100,000 write/erase cycles
• High performance
55 ns maximum access time
• Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes
Any combination of sectors can be erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded Erase™ Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded Program™ Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Low VCC write inhibit £ 3.2 V
• Hardware RESET pin
Resets internal state machine to the read mode
• Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
• Sector protection
Hardware method that disables any combination of sector from write or erase operation
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin
DS05-20868-3E Connection Diagram
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