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This DS9502 was designed as an additional ESD protection for SRAMbased batterybuffered portable memory modules. The memory chips used for these modules have already a strong ESDprotection structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than 27 kV (IEC 8012 Reference model). In case of abnormal ESD hits beyond its maximum ratings the DS9502 will eventually fail "short" thus preventing further damage.
During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds the trigger voltage, the I/V characteristic of the device will "snapback" allowing the same or higher amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage is maintained, the device will stay in the "snapback mode". If the voltage or the current falls below the holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a small leakage current.
DS9502 Maximum Ratings
Operating Temperature 40°C to +85°C Storage Temperature 55°C to +125°C Soldering Temperature 260°C for 10 seconds Continuous DC Current Through Package 80 mA
DS9502 Features
`Zener characteristic with voltage snapback to protect against ESD hits `High avalanche voltage, low leakage and low capacitance avoid signal attenuation `Compatible to all 5V logic families `Space saving, low inductance TSOC surface mount package `Symmetric dualport bondout to maximize energy dissipation in protection device `Industrial temperature range