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EGP30K, EGP30M, EGP50

Table of contents:
Info of EGP30K
Info of EGP30M
Info of EGP50

EGP30K, EGP30M, EGP50 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

EGP30K, EGP30M, EGP50 Datasheet download

Five Points

Part Number: EGP30K

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: DIODE FAST GPP 3A 800V DO-201AD

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EGP30K Parameters

Technical/Catalog Information	EGP30K
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	800V
Current - Average Rectified (Io)	3A
Voltage - Forward (Vf) (Max) @ If	1.7V @ 3A
Reverse Recovery Time (trr)	75ns
Current - Reverse Leakage @ Vr	5A @ 800V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Axial
Package / Case	DO-201AD, Axial
Packaging	Tape & Reel (TR)
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	EGP30K EGP30K

EGP30K Maximum Ratings

` Operating Temperature: -55 to +150
` Storage Temperature: -55 to +150
` Typical Thermal Resistance: 20/W Junction to Ambient

EGP30K Features

· Superfast recovery time for high efficiency
· Glass passivated cavity-free junction, Plastic case
· Low forward voltage, high current capability
· Low leakage current

EGP30M Maximum Ratings

Ratings at 25 ambient temperature unless otherwise specified.	SYMBOLS	EGP30								UNITS
	SYMBOLS	A	B	D	F	G	J	K	M	UNITS
Maximum repetitive peak reverse voltage	V_RRM	50	100	200	300	400	600	800	1000	Volts
Maximum RMS voltage	V_RMS	35	70	140	210	280	420	560	700	Volts
Maximum DC blocking voltage	V_DC	50	100	200	300	400	600	800	1000	Volts
Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55	I_(AV)	3.0								Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	I_FSM	125						115		Amps
Maximum instantaneous forward voltage at 1.0A	V_F	1.0				1.25		1.7		Volts
Maximum DC reverse currentTA=25 at rated DC blocking voltageTA=125 TA=150	I_R	5 50 120						5 120 -		A
Maximum reverse recovery time (NOTE 1)	t_rr	50						75		ns
Typical junction capacitance (NOTE 2)	C_J	75								pF
Typical thermal resistance (NOTE 3)	R_JAR_JL	20 8								/W
Operating junction and storage temperature range	T_J, T_STG	-65 to +175						-55 to +150

NOTES : (1) Reverse recovery test condition : I_F 0.5A, I_R=1.0A, I_rr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead lengths, P.C.B. mounted.

EGP30M Features

` GPRC (Glass Passivated Rectifier Chip) inside
` Glass passivated cavity-free junction
` Superfast recovery time for high efficiency
` Low forward voltage , high current capability
` Low leakage current
` High surge current capability
` High temperature soldering guaranteed: 260/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
` Plastic package has Underwriters Laboratory Flammability Classification 94V-0

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