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ES1J, ES1J-13, ES1JB-13

Table of contents:
Info of ES1J
Info of ES1J-13
Info of ES1JB-13

ES1J, ES1J-13, ES1JB-13 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:DO-214AC D/C:08+

ES1J, ES1J-13, ES1JB-13 Datasheet download

Five Points

Part Number: ES1J

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: DO-214AC

D/C: 08+

Description: DIODE FAST 1A 600V SMA

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ES1J Parameters

Technical/Catalog Information	ES1J
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.7V @ 1A
Reverse Recovery Time (trr)	35ns
Current - Reverse Leakage @ Vr	5A @ 600V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Packaging	Cut Tape (CT)
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ES1J ES1J ES1JFSCT ND ES1JFSCTND ES1JFSCT

ES1J Maximum Ratings

Characteristic	Symbol	ES1J	Unit
Peak Repetitive Reverse VoltageWorking Peak Reverse Voltage DC Blocking Voltage	V_RRM V_RWM V_R	600	V
RMS Reverse Voltage	V_R(RMS)	420	V
Average Rectified Output Current @T_L = 120°C	I_O	1.0	A
Non-Repetitive Peak Forward Surge Current8.3ms Single half sine-wave superimposed onrated load (JEDEC Method)	I_FSM	30	A
Forward Voltage @_IF = 1.0A	V_FM	1.7	V
Peak Reverse Current @T_A = 25°C At Rated DC Blocking Voltage @T_A= 100°C	I_RM	5.0 500	A
Reverse Recovery Time (Note 1)	t_rr	35	nS
Typical Junction Capacitance (Note 2)	C_j	10	pF
Typical Thermal Resistance (Note 3)	R_JL	35	K/W
Operating and Storage Temperature Range	T_j, T_STG	-65 to +150	°C

ES1J Features

Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability Classification Rating 94V-O

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