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F10176DC, F10182346(J), F1020

F10176DC, F10182346(J), F1020 Selling Leads, Datasheet

MFG:Polyfet  Package Cooled:DIP/16  D/C:80+

F10176DC, F10182346(J), F1020 Picture

F10176DC, F10182346(J), F1020 Datasheet download

Five Points

Part Number: F10176DC

 

MFG: Polyfet

Package Cooled: DIP/16

D/C: 80+

 

 

 
 
 
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F10176DC Suppliers

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  • F10116DC

  • Vendor: Fairchild D/C: 03+& Qty: DIP/16/  Adddate: 2024-04-28
  • Inquire Now
  • Walsoon Group Ltd   China
    Contact: Mr.StevenLee   MSN:steven200867@hotmail.com
    Tel: 86-755-82818867-808
    Fax: 86-755-82818852
    (17)

About F1001

PDF/DataSheet Download

Datasheet: F1001

File Size: 38264 KB

Manufacturer: POLYFET [Polyfet RF Devices]

Download : Click here to Download

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F10182346(J) Suppliers

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  • F10116DC

  • Vendor: Fairchild D/C: 03+& Qty: DIP/16/  Adddate: 2024-04-28
  • Inquire Now
  • Walsoon Group Ltd   China
    Contact: Mr.StevenLee   MSN:steven200867@hotmail.com
    Tel: 86-755-82818867-808
    Fax: 86-755-82818852
    (17)

About F1001

PDF/DataSheet Download

Datasheet: F1001

File Size: 38264 KB

Manufacturer: POLYFET [Polyfet RF Devices]

Download : Click here to Download

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F1020 Suppliers

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About F1020

PDF/DataSheet Download

Datasheet: F1020

File Size: 41658 KB

Manufacturer: POLYFET [Polyfet RF Devices]

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F1020 General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance

F1020 Maximum Ratings

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
390 Watts 0.45/W 200 -65 to 150 20 A 70V 70V 30V

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