F1060, F1063, F1065 Selling Leads, Datasheet
MFG:Polyfet
MFG:Polyfet
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PDF/DataSheet Download
Datasheet: F1060
File Size: 39080 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: F1063
File Size: 33255 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: F1065
File Size: 37298 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM , MRI, Laser Driver and others.
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
50 Watts | 3.5/W | 200 | -65 to 150 | 2 A | 70V | 70V | 30V |
Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
80 Watts | 1.95/W | 200 | -65 to 150 | 4 A | 70V | 70V | 30V |
Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
350 Watts | 0.5/W | 200 | -65 to 150 | 16 A | 70V | 70V | 30V |