F1207, F1209, F1209M-1W Selling Leads, Datasheet
MFG:POLYFET Package Cooled:TO-62S D/C:1000
F1207, F1209, F1209M-1W Datasheet download
Part Number: F1207
MFG: POLYFET
Package Cooled: TO-62S
D/C: 1000
F1207, F1209, F1209M-1W
- Table of contents:
Info of F1207
Info of F1209
Info of F1209M-1W
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About F1207
PDF/DataSheet Download
Datasheet: F1207
File Size: 38908 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
About F1209
PDF/DataSheet Download
Datasheet: F1209
File Size: 37673 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
About F1200A
PDF/DataSheet Download
Datasheet: F1200A
File Size: 86892 KB
Manufacturer: DIOTEC [Diotec Semiconductor]
Download : Click here to Download
F1207 General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
F1207 Maximum Ratings
| Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
| 100 Watts | 1.75/W | 200 | -65 to 150 | 4 A | 50V | 50V | 30V |
F1209 General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
"Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
F1209 Maximum Ratings
| Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
| 80 Watts | 2.1/W | 200 | -65 to 150 | 4 A | 50V | 50V | 30V |
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