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FDC306P, FDC3512, FDC3601N

Table of contents:
Info of FDC306P
Info of FDC3512
Info of FDC3601N

FDC306P, FDC3512, FDC3601N Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDC306P, FDC3512, FDC3601N Datasheet download

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Part Number: FDC3512

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH DUAL 100V SSOT-6

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FDC3512 Parameters

Technical/Catalog Information	FDC3512
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	77 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	634pF @ 40V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 10V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC3512 FDC3512

FDC3512 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDC3512 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	80	V
V_GSS	Gate-Source Voltage	± 20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	3.0	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	20	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	1.6	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.8	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDC3512 Features

• 3.0 A, 80 V R _DS(ON)= 77 mΩ @ V_GS = 10 V
R _DS(ON) = 88 mΩ @ V_GS = 6 V
• High performance trench technology for extremely low R _DS(ON)
• Low gate charge (13nC typ)
• High power and current handling capability
• Fast switching speed

FDC3512 Typical Application

• DC/DC converter

FDC3601N Parameters

Technical/Catalog Information	FDC3601N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	1A
Rds On (Max) @ Id, Vgs	500 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	153pF @ 50V
Power - Max	700W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC3601N FDC3601N

FDC3601N General Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

FDC3601N Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	100	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	1.0	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	4.0	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	0.96	W
		0.9
		0.7
T_J, T_stg	Operating and Storage Junction Temperature Range	−55 to +150	°C

FDC3601N Features

• 1.0 A, 100 V. R _DS(ON)= 500 mΩ @ V_GS = 10 V
R _DS(ON)= 550 mΩ @ V_GS = 6.0 V
• Low gate charge (3.7nC typical)
• Fast switching speed.
• High performance trench technology for extremely low R _DS(ON)
• SuperSOT^TM-6 package: small footprint 72%
(smaller than standard SO-8); low profile (1mm thick).

FDC3601N Typical Application

• Load switch
• Battery protection
• Power management

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