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FDC3612, FDC3616N, FDC37869

Table of contents:
Info of FDC3612
Info of FDC3616N
Info of FDC37869

FDC3612, FDC3616N, FDC37869 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDC3612, FDC3616N, FDC37869 Datasheet download

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Part Number: FDC3612

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CHAN 100V 3.7A 6SSOP

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FDC3612 Parameters

Technical/Catalog Information	FDC3612
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	2.6A
Rds On (Max) @ Id, Vgs	125 mOhm @ 2.6A, 10V
Input Capacitance (Ciss) @ Vds	660pF @ 50V
Power - Max	800mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC3612 FDC3612 FDC3612DKR ND FDC3612DKRND FDC3612DKR

FDC3612 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDC3612 Maximum Ratings

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		100 ± 20 2.6 20 1.6 0.8 55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA
RJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

78
30

°C/W
°C/W

FDC3612 Features

• 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 VRDS(ON) = 135 m @ VGS = 6 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (14nC typ)
• High power and current handling capability
• Fast switching speed

FDC3612 Typical Application

• DC/DC converter

FDC3612 Connection Diagram

FDC3616N Parameters

Technical/Catalog Information	FDC3616N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	3.7A
Rds On (Max) @ Id, Vgs	70 mOhm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds	1215pF @ 50V
Power - Max	1.1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	32nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC3616N FDC3616N FDC3616NDKR ND FDC3616NDKRND FDC3616NDKR

FDC3616N General Description

FDC3616N Maximum Ratings

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		100 ± 20 3.7 20 2 1.1 −55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA
RJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

60
111
0.5

°C/W
°C/W

FDC3616N Features

• 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V RDS(ON) = 80 m @ VGS = 6.0
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (23nC typical)
• High power and current handling capability
• Fast switching speed.

FDC3616N Typical Application

• DC/DC converter
• Load Switching

FDC3616N Connection Diagram

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