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FDC5614P, FDC563N, FDC6000NZ

Table of contents:
Info of FDC5614P
Info of FDC563N
Info of FDC6000NZ

FDC5614P, FDC563N, FDC6000NZ Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT163 D/C:08+

FDC5614P, FDC563N, FDC6000NZ Datasheet download

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Part Number: FDC5614P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT163

D/C: 08+

Description: MOSFET N-CH DUAL 20V 6.5A 6SSOT

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FDC5614P Parameters

Technical/Catalog Information	FDC5614P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	105 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	759pF @ 30V
Power - Max	800mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	24nC @ 10V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC5614P FDC5614P FDC5614PDKR ND FDC5614PDKRND FDC5614PDKR

FDC5614P General Description

This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.

FDC5614P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	60	V
V_GSS	Gate-Source Voltage	± 20	V
I_D,	Drain Current - Continuous (Note 1a) - Pulsed	3.0	A
I_D,	Drain Current - Continuous (Note 1a) - Pulsed	20	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	1.6	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.8	W
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDC5614P Features

• 3 A, 60 V. R _DS(ON) = 0.105 Ω @ V_GS = 10 V
R _DS(ON) = 0.135 Ω @ V_GS = 4.5 V
• Fast switching speed
• High performance trench technology for extremely low R _DS(ON)

FDC5614P Typical Application

• DC-DC converters
• Load switch
• Power management

FDC6000NZ Parameters

Technical/Catalog Information	FDC6000NZ
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7.3A
Rds On (Max) @ Id, Vgs	20 mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) @ Vds	840pF @ 10V
Power - Max	1.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6000NZ FDC6000NZ FDC6000NZTR ND FDC6000NZTRND FDC6000NZTR

FDC6000NZ General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

FDC6000NZ Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	7.3	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	20	A
P_D	Power Dissipation for Dual Operation (Note 1a)	1.6	W
	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.8
	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.2
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDC6000NZ Features

• 6.5 A, 20 V R_DS(ON) = 20 mΩ @ V_GS = 4.5 V
R_DS(ON) = 28 mΩ @ V_GS = 2.5 V
• ESD protection diode (note 3)
• High performance trench technology for extremely low R_DS(ON)
• FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

FDC6000NZ Typical Application

• Battery management/Charger Application
• Load switch

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