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FDC60-48S05, FDC604P, FDC604P-NL

Table of contents:
Info of FDC60-48S05
Info of FDC604P
Info of FDC604P-NL

FDC60-48S05, FDC604P, FDC604P-NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT23 D/C:60000

FDC60-48S05, FDC604P, FDC604P-NL Datasheet download

Five Points

Part Number: FDC604P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT23

D/C: 60000

Description: MOSFET P-CHAN 20V SSOT6

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FDC604P Parameters

Technical/Catalog Information	FDC604P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	33 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1926pF @ 10V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 4.5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC604P FDC604P FDC604PTR ND FDC604PTRND FDC604PTR

FDC604P General Description

This P-Channel 1.8V specified MOSFET usesFairchild's low voltage PowerTrench process. It hasbeen optimized for battery power managementapplications.

FDC604P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-5.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	-20	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	1.6	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.8	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150

FDC604P Features

5.5 A, 20 V. R_DS(ON) = 0.033 @ V_GS = 4.5 V
R_DS(ON) = 0.043 @ V_GS= 2.5 V
R_DS(ON) = 0.060@ V_GS = 1.8 V
Fast switching speed.
High performance trench technology for extremelylow R_DS(ON)

FDC604P Typical Application

Battery management
Load switch
Battery protection

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