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FDC602P, FDC602P-NL, FDC6036P

Table of contents:
Info of FDC602P
Info of FDC602P-NL
Info of FDC6036P

FDC602P, FDC602P-NL, FDC6036P Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:05+ D/C:30000

FDC602P, FDC602P-NL, FDC6036P Datasheet download

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Part Number: FDC602P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: 05+

D/C: 30000

Description: MOSFET P-CHAN DUAL 20V 5A 6SSOT

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FDC602P Parameters

Technical/Catalog Information	FDC602P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	35 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1456pF @ 10V
Power - Max	800mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	20nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC602P FDC602P FDC602PDKR ND FDC602PDKRND FDC602PDKR

FDC602P General Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

FDC602P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	12	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-5.5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	-30	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	1.6	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.8	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150

FDC602P Features

5.5 A, 12 V R_DS(ON) = 0.033 @ V_GS = 4.5 V
R_DS(ON) = 0.052 @ V_GS = 2.5 V
Fast switching speed.
High performance trench technology for extremely low R_DS(ON).

FDC602P Typical Application

Battery management
Load switch
Battery protection

FDC6036P Parameters

Technical/Catalog Information	FDC6036P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	44 mOhm @ 5A, 4.5V
Input Capacitance (Ciss) @ Vds	992pF @ 10V
Power - Max	900mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6036P FDC6036P FDC6036PCT ND FDC6036PCTND FDC6036PCT

FDC6036P General Description

This dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the R_DS(ON) and thermal properties of the device are optimized for battery power management applications.

FDC6036P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-5	A
I_D	Drain Current Continuous (Note 1a) Pulsed	-20	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	1.8	W
P_D	Maximum Power Dissipation (Note 1a) (Note 1b)	0.9	W
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150

FDC6036P Features

5 A, 20 V. R_DS(ON) = 44 m @ VGS = 4.5 V
R_DS(ON) = 64 m @ VGS = 2.5 V
R_DS(ON)= 95 m@ VGS = 1.8 V
Low gate charge, High Power and Current handling capability
High performance trench technology for extremely low R_DS(ON)FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

FDC6036P Typical Application

Battery management/Charger Application
Load switch

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