MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:05+ D/C:93000
FDC6306P, FDC6306P(USB10H), FDC6308P Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 05+
D/C: 93000
Description: MOSFET P-CHAN DUAL 20V SSOT6
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PDF/DataSheet Download
Datasheet: FDC6306P
File Size: 241069 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC05
File Size: 96843 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC6308P
File Size: 332944 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDC6306P |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 1.9A |
| Rds On (Max) @ Id, Vgs | 170 mOhm @ 1.9A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 441pF @ 10V |
| Power - Max | 700mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 4.2nC @ 4.5V |
| Package / Case | SuperSOT-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC6306P FDC6306P FDC6306PTR ND FDC6306PTRND FDC6306PTR |
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
-20 |
V |
|
VGSS |
Gate-Source Voltage |
±8 |
V |
|
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
-1.9 |
A |
|
-5 | |||
|
PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b) (Note 1c) |
0.96 |
W |
|
0.9 | |||
|
0.7 | |||
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
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