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FDC6331L, FDC6332L, FDC6333C

Table of contents:
Info of FDC6331L
Info of FDC6332L
Info of FDC6333C

FDC6331L, FDC6332L, FDC6333C Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOT-23 D/C:05+

FDC6331L, FDC6332L, FDC6333C Datasheet download

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Part Number: FDC6331L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: SOT-23

D/C: 05+

Description: MOSFET N-CH/P-CHAN 30V SSOT6

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FDC6331L Parameters

Technical/Catalog Information	FDC6331L
Vendor	Fairchild Semiconductor
Category	Integrated Circuits (ICs)
Type	High Side Switch
Number of Outputs	1
Voltage - Input	2.5 ~ 8 V
Package / Case	SuperSOT-6
Packaging	Tape & Reel (TR)
Current Limit	2.8A
Internal Switch(s)	Yes
Operating Temperature	-55°C ~ 150°C
Rds (On)	55 mOhm
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6331L FDC6331L FDC6331LTR ND FDC6331LTRND FDC6331LTR

FDC6331L General Description

This device is particularly suited for compact powermanagement in portable electronic equipment where2.5V to 8V input and 2.8A output current capability areneeded. This load switch integrates a small N-Channelpower MOSFET (Q1) that drives a large P-Channelpower MOSFET (Q2) in one tiny SuperSOT™-6package.

FDC6331L Maximum Ratings

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDC6331L	Full Production	RoHS Compliant	$0.304	SSOT-6	6	TAPE REEL		Line 1: &E&Y (Binary Calendar Year Coding) Line 2: .331

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDC6331L is available. Click here for more information .

FDC6331L Features

2.8 A, 8 V. R_DS(ON)= 55 m @ V_GS= 4.5 V
                           R_DS(ON) = 70 m @ V_GS= 2.5 V
                           R_DS(ON)= 100 m @ V_GS= 1.8 V
Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model)
High performance trench technology for extremely low R_DS(ON)

FDC6331L Typical Application

Load switch
Power management

FDC6332L Parameters

Technical/Catalog Information	FDC6332L
Vendor	Fairchild Semiconductor
Category	Integrated Circuits (ICs)
Type	High Side Switch
Number of Outputs	1
Voltage - Input	1.8 ~ 8 V
Package / Case	SuperSOT-6
Packaging	Tape & Reel (TR)
Current Limit	1A
Internal Switch(s)	Yes
Operating Temperature	-55°C ~ 150°C
Rds (On)	409 mOhm
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6332L FDC6332L

FDC6332L General Description

This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and in a small SuperSotTM6 package. It uses Fairchild's advanced low voltage PowerTrench process. The RDS(ON) is 750 mΩ per the switch @ VGS 1.8Vand is optimized for battery power management applications.

FDC6332L Maximum Ratings

Symbol	Parameter	Ratings	Units
V_IN	Input Voltage	±8	V
V_ON	Turn-On Voltage	8	V
I_Load	Load Current Continuous (Note1) Pulsed	1.0	A
I_Load	Load Current Continuous (Note1) Pulsed	2.0	A
P_D	Maximum Power Dissipation (Note1)	0.7	W
T_J, T_stg	Operating and Storage Tempature Ranger	-55 to +150	°C

FDC6332L Features

•   1 A, 8 V. R _DS(ON)= 350 mΩ @ V_GS = 4.5 V
                     R _DS(ON) = 500 mΩ @ V_GS = 2.5 V
                     R _DS(ON)= 750 mΩ @ V_GS = 1.8 V

• N-Channel MOSFET includes Zener protection for ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely low R _DS(ON)

FDC6332L Typical Application

• Battery management/Charger Application
• Accessory load switching

FDC6333C Parameters

Technical/Catalog Information	FDC6333C
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2.5A, 2A
Rds On (Max) @ Id, Vgs	95 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	282pF @ 15V
Power - Max	700mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	6.6nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6333C FDC6333C FDC6333CCT ND FDC6333CCTND FDC6333CCT

FDC6333C General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

FDC6333C Maximum Ratings

Symbol	Parameter		Q1	Q2	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ±16 2.5 8	30 ±25 2.0 8	V V A
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	0.96 0.9 0.7		W
T_J, T_STG	Operating and Storage Junction Temperature Range		55 to +150		°C

FDC6333C Features

` Q1 2.5 A, 30V. RDS(ON) = 95 mW @ VGS = 10 V RDS(ON) = 150 mW @ VGS = 4.5 V
` Q2 2.0 A, 30V. RDS(ON) = 150 mW @ VGS = 10 V RDS(ON) = 220 mW @ VGS = 4.5 V
` Low gate charge
` High performance trench technology for extremely low RDS(ON).
` SuperSOT 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

FDC6333C Typical Application

· DC/DC converter
· Load switch
· LCD display inverter

FDC6333C Connection Diagram

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