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FES8JT-E3/45, FESB16JT, FESB8

Table of contents:
Info of FES8JT-E3/45
Info of FESB16JT
Info of FESB8

FES8JT-E3/45, FESB16JT, FESB8 Selling Leads, Datasheet

MFG:GENERAL SEMICONDUCTOR Package Cooled:NA/ D/C:09+

FES8JT-E3/45, FESB16JT, FESB8 Datasheet download

Five Points

Part Number: FES8JT-E3/45

MFG: GENERAL SEMICONDUCTOR

Package Cooled: NA/

D/C: 09+

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FESB16JT General Description

FES16AT thru FES16JT datasheet

FESB16JT Maximum Ratings

Parameter	Symbol	FES 16AT	FES 16BT	FES 16CT	FES 16DT	FES 16FT	FES 16GT	FES 16HT	FES 16JT	Unit
Maximum repetitive peak reverse voltage	V_RRM	50	100	150	200	300	400	500	600	V
Maximum RMS voltage	V_RMS	35	70	105	140	210	250	350	420	V
Maximum DC blocking voltage	V_DC	50	100	150	200	300	400	500	600	V
Maximum average forward rectified current at TC=100°C	I_F(AV)	16.0								A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) at TC=100°C	IF_SM	250.0								A
Operating storage and temperature range	T_J, T_STG	65 to +150								C
RMS isolation voltage (FESF) from terminals to heatsink with t = 1.0 second, RH 30%	V_ISOL	4500(1) 3500(2) 1500(3)								V

FESB16JT Features

* Plastic package has Underwriters Laboratory Flammability Classification 94V-0
* Glass passivated chip junction
* Low power loss
* High surge current capability
* Low forward voltage, high current capability
* Superfast recovery times for high efficiency

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