FLASH MEMORY, FLASH MEMORY 28F320J3A 3.3V TSOP56 INTEL, FLASH MEMORY 512KX16 120 NS TE Selling Leads, Datasheet
MFG:IN STOCK Package Cooled:SOP20 D/C:09+
Part Number: FLASH MEMORY
MFG: IN STOCK
Package Cooled: SOP20
D/C: 09+
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FLASH MEMORY, FLASH MEMORY 28F320J3A 3.3V TSOP56 INTEL, FLASH MEMORY 512KX16 120 NS TE
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About FLA1
PDF/DataSheet Download
Datasheet: FLA1
File Size: 38100 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About FLA1
PDF/DataSheet Download
Datasheet: FLA1
File Size: 38100 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About FLA1
PDF/DataSheet Download
Datasheet: FLA1
File Size: 38100 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
FLASH MEMORY General Description
The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron's advanced 0.18µm CMOS floating-gate process.
The MT28F004B3 and MT28F400B3 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.
FLASH MEMORY Maximum Ratings
Voltage on VCC Supply
Relative to VSS ..........................................-0.5V to +4V**
Input Voltage Relative to VSS ....................-0.5V to +4V**
VPP Voltage Relative to VSS ......................-0.5V to +5.5V†
RP# or A9 Pin Voltage
Relative to VSS ......................................-0.5V to +12.6V††
Temperature Under Bias .......................... -40ºC to +85ºC
Storage Temperature (plastic) ............... -55ºC to +125ºC
Power Dissipation .........................................................1W
Relative to VSS ..........................................-0.5V to +4V**
Input Voltage Relative to VSS ....................-0.5V to +4V**
VPP Voltage Relative to VSS ......................-0.5V to +5.5V†
RP# or A9 Pin Voltage
Relative to VSS ......................................-0.5V to +12.6V††
Temperature Under Bias .......................... -40ºC to +85ºC
Storage Temperature (plastic) ............... -55ºC to +125ºC
Power Dissipation .........................................................1W
FLASH MEMORY Features
• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V VCC
3.3V ±0.3V VPP application programming
5V ±10% VPP application/production programming1
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B3, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B3, 512K x 8)
• TSOP and SOP packaging options
FLASH MEMORY Connection Diagram
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