FRF450R, FRF501G, FRF502G Selling Leads, Datasheet
MFG:KA Package Cooled:TO- D/C:TO-
FRF450R, FRF501G, FRF502G Datasheet download
Part Number: FRF450R
MFG: KA
Package Cooled: TO-
D/C: TO-
FRF450R, FRF501G, FRF502G
- Table of contents:
Info of FRF450R
Info of FRF501G
Info of FRF502G
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About FRF450R
PDF/DataSheet Download
Datasheet: FRF450R
File Size: 49879 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About FRF501G
PDF/DataSheet Download
Datasheet: FRF501G
File Size: 127295 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
About FRF502G
PDF/DataSheet Download
Datasheet: FRF502G
File Size: 127295 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
FRF450R General Description
The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet.
FRF450R Maximum Ratings
| FRF450D, R, H | UNITS | ||
| Drain-Source Voltage | VDS | 500 | V |
| Drain-Gate Voltage (RGS = 20k) | VDGR | 500 | V |
| Continuous Drain Current TC = +25 TC = +100 |
ID | 9 6 |
A A |
| Pulsed Drain Current | IDM | 27 | A |
| Gate-Source Voltage | VGS | ±20 | V |
| Maximum Power Dissipation TC = +25 TC = +100 Derated Above +25 |
PT | 125 50 1.00 |
W W W/ |
| Inductive Current, Clamped, L = 100H, (See Test Figure) | ILM | 27 | A |
| Continuous Source Current (Body Diode) | IS | 9 | A |
| Pulsed Source Current (Body Diode) | ISM | 27 | A |
| Operating And Storage Temperature | TJC, TSTG | -55 to +150 | |
| Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max | TL | 300 |
FRF450R Features
• 9A, 500V, RDS(on) = 0.615
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 30.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 30.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
FRF501G Maximum Ratings
| Type Number | Symbol | FRF501G | FRF502G | FRF503G | FRF504G | FRF505G | FRF506G | FRF507G | Units |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum Average Forward Rectified Current | I(AV) | 5.0 | A | ||||||
| Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) |
IFSM | 30 | A | ||||||
| Maximum Instantaneous Forward Voltage @ 5.0A | VF | 1.5 | V | ||||||
| Maximum DC Reverse Current @ TC =25 at Rated DC Blocking Voltage @ TC =125 |
IR | 5.0 100 |
uA uA | ||||||
| Maximum Reverse Recovery Time ( Note 1) | Trr | 150 | 250 | 500 | nS | ||||
| Typical Thermal Resistance (Note 2) | RJC | 4.0 | /W | ||||||
| Operating and Storage Temperature Range | TJ ,TSTG | -65 to +150 | |||||||
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink.
FRF501G Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
High current capability
High reliability
High surge current capability
FRF502G Maximum Ratings
| Type Number | Symbol | FRF501G | FRF502G | FRF503G | FRF504G | FRF505G | FRF506G | FRF507G | Units |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum Average Forward Rectified Current | I(AV) | 5.0 | A | ||||||
| Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) |
IFSM | 30 | A | ||||||
| Maximum Instantaneous Forward Voltage @ 5.0A | VF | 1.5 | V | ||||||
| Maximum DC Reverse Current @ TC =25 at Rated DC Blocking Voltage @ TC =125 |
IR | 5.0 100 |
uA uA | ||||||
| Maximum Reverse Recovery Time ( Note 1) | Trr | 150 | 250 | 500 | nS | ||||
| Typical Thermal Resistance (Note 2) | RJC | 4.0 | /W | ||||||
| Operating and Storage Temperature Range | TJ ,TSTG | -65 to +150 | |||||||
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink.
FRF502G Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
High current capability
High reliability
High surge current capability
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