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FRF8060HRUM-021/N16B-5228-001, FRF9150R, FRF9250R

Table of contents:
Info of FRF8060HRUM-021/N16B-5228-001
Info of FRF9150R
Info of FRF9250R

FRF8060HRUM-021/N16B-5228-001, FRF9150R, FRF9250R Selling Leads, Datasheet

MFG:FUJITSU Package Cooled:TO- D/C:1998

FRF8060HRUM-021/N16B-5228-001, FRF9150R, FRF9250R Picture

FRF8060HRUM-021/N16B-5228-001, FRF9150R, FRF9250R Datasheet download

Five Points

Part Number: FRF8060HRUM-021/N16B-5228-001

MFG: FUJITSU

Package Cooled: TO-

D/C: 1998

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About FRF1001G

PDF/DataSheet Download

Datasheet: FRF1001G

File Size: 65659 KB

Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]

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FRF9150R Suppliers

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About FRF9150R

PDF/DataSheet Download

Datasheet: FRF9150R

File Size: 50302 KB

Manufacturer: INTERSIL [Intersil Corporation]

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About FRF9250R

PDF/DataSheet Download

Datasheet: FRF9250R

File Size: 49173 KB

Manufacturer: INTERSIL [Intersil Corporation]

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FRF9150R Features

• 23A, -100V, rDS(ON) = 0.140
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
• Gamma Dot - Survives 3E9 RAD (Si)/s at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD (Si)/s Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm²
- Usable to 3E14 Neutrons/cm²

FRF9150R Typical Application

Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.

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