FX853, FX854, FX855 Selling Leads, Datasheet
MFG:SAMYO Package Cooled:N/A D/C:09+
FX853, FX854, FX855
- Table of contents:
Info of FX853
Info of FX854
Info of FX855
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About FX853
PDF/DataSheet Download
Datasheet: FX853
File Size: 138719 KB
Manufacturer: SANYO [Sanyo Semicon Device]
Download : Click here to Download
About FX854
PDF/DataSheet Download
Datasheet: FX854
File Size: 138311 KB
Manufacturer: SANYO [Sanyo Semicon Device]
Download : Click here to Download
About FX855
PDF/DataSheet Download
Datasheet: FX855
File Size: 138795 KB
Manufacturer: SANYO [Sanyo Semicon Device]
Download : Click here to Download
FX853 Maximum Ratings
| Parameter | Symbol | Conditions | Ratings | Unit |
| [MOSFET] | ||||
| Drain-to-Source Voltage | VDSS | 30 | V | |
| Gate-to-Source Voltage | VGSS | ±15 | V | |
| Drain Current (DC) | ID | 2 | A | |
| Drain Current (Pulse) | IDP | PW10s, duty cycle1% | 8 | A |
| Allowable Power Dissipation | PD | Tc=25°C | 6 | W |
| PD | Mounted on ceramic board (750mm2*0.8mm) | 1.5 | W | |
| Channel Temperature | Tch | 150 | ||
| Storage Temperature | Tstg | 55 to +150 | ||
| [SBD] | ||||
| Repetitive Peak Reverse Voltage | VRRM | 50 | V | |
| Non-repetitive Peak Reverse Surge Voltage | VRSM | 55 | V | |
| Average Rectified Current | IO | 500 | mA | |
| Surge Forward Current | IFSM | 50Hz sine wave, 1cycle | 5 | A |
| Junction Temperature | Tj | 55 to +125 | ||
| Storage Temperature | Tstg | 55 to +125 | ||
FX853 Features
· Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.
· The FX853 is formed with 2 chips, one being equivalent to the 2SK1467 and the other the SB05-05P, placed in one package.
FX853 Connection Diagram
FX854 Maximum Ratings
| Parameter | Symbol | Conditions | Ratings | Unit |
| [MOSFET] | ||||
| Drain-to-Source Voltage | VDSS | -60 | V | |
| Gate-to-Source Voltage | VGSS | ±15 | V | |
| Drain Current (DC) | ID | -1 | A | |
| Drain Current (Pulse) | IDP | PW10s, duty cycle1% | -4 | A |
| Allowable Power Dissipation | PD | Tc=25°C | 6 | W |
| PD | Mounted on ceramic board (750mm2*0.8mm) | 1.5 | W | |
| Channel Temperature | Tch | 150 | ||
| Storage Temperature | Tstg | 55 to +150 | ||
| [SBD] | ||||
| Repetitive Peak Reverse Voltage | VRRM | 50 | V | |
| Non-repetitive Peak Reverse Surge Voltage | VRSM | 55 | V | |
| Average Rectified Current | IO | 500 | mA | |
| Surge Forward Current | IFSM | 50Hz sine wave, 1cycle | 5 | A |
| Junction Temperature | Tj | 55 to +125 | ||
| Storage Temperature | Tstg | 55 to +125 | ||
FX854 Features
· Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.
· The FX854 is formed with 2 chips, one being equivalent to the 2SJ190 and the other the SB05-05P,placed in one package
FX854 Connection Diagram
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