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GF1J-E3/67A, GF1K, GF1M

Table of contents:
Info of GF1J-E3/67A
Info of GF1K
Info of GF1M

GF1J-E3/67A, GF1K, GF1M Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:DO-214AC D/C:09+

GF1J-E3/67A, GF1K, GF1M Datasheet download

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Part Number: GF1J-E3/67A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: DO-214AC

D/C: 09+

Description: RECT BRIDGE GPP 1000V 1A DO214AC

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GF1K Parameters

Technical/Catalog Information	GF1K
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	800V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.2V @ 1A
Reverse Recovery Time (trr)	2s
Current - Reverse Leakage @ Vr	5A @ 800V
Speed	Standard Recovery >500ns, > 200mA (Io)
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Packaging	Tape & Reel (TR)
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	GF1K GF1K

GF1K Maximum Ratings

	SYMBOL	GF1							UNITS
Device marking code	SYMBOL	A	B	D	G	J	K	M	UNITS
Maximum repetitive peak reverse voltage	V_RRM	50	100	200	400	600	800	1000	Volts
Maximum RMS voltage	V_RMS	35	70	140	280	420	560	700	Volts
Maximum DC blocking voltage	V_DC	50	100	200	400	600	800	1000	Volts
Maximum average forward rectified current (SEE FIG.1)	I_(AV)	1.0							Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	I_FSM	30.0							Amps
Maximum instantaneous forward voltage at 1.0 A	V_F	1.10					1.20		Volts
Maximum DC reverse current T_A=25 at rated DC blocking voltage T_A=125	I_R	5 50.0							uA
Typical reverse recovery time (NOTE 1)	t_rr	2.0							s
Typical junction capacitance (NOTE 2)	C_J	15.0							pF
Typical thermal resistance (NOTE 3)	R_JA R_JL	80.0 26.0							/W
Operating junction and storage temperature range	T_J, T_STG	-65 to +175

NOTES:
(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A
(2) Measured at 1.0 MHz and applied V_R=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas

GF1K Features

· Plastic package has Underwriters Laboratory Flammability Classification 94V-0
· Ideal for surface mount automotive applications
· High temperature metallurgically bonded construction
· Glass passivated cavity-free junction
· Capable of meeting environmental standards of MIL-S-19500
· Built-in strain relief
· Easy pick and place
· High temperature soldering guaranteed: 450°C/5 seconds at terminals
· Complete device submersible temperature of 265°C for 10 seconds in solder bath

GF1M Parameters

Technical/Catalog Information	GF1M
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1000V (1kV)
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.2V @ 1A
Reverse Recovery Time (trr)	2s
Current - Reverse Leakage @ Vr	5A @ 1000V
Speed	Standard Recovery >500ns, > 200mA (Io)
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Packaging	Tape & Reel (TR)
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	GF1M GF1M GF1MFS ND GF1MFSND GF1MFS

GF1M General Description

GF1A thru GF1M datasheet

GF1M Maximum Ratings

	SYMBOL	GF1							UNITS
Device marking code	SYMBOL	A	B	D	G	J	K	M	UNITS
Maximum repetitive peak reverse voltage	V_RRM	50	100	200	400	600	800	1000	Volts
Maximum RMS voltage	V_RMS	35	70	140	280	420	560	700	Volts
Maximum DC blocking voltage	V_DC	50	100	200	400	600	800	1000	Volts
Maximum average forward rectified current (SEE FIG.1)	I_(AV)	1.0							Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	I_FSM	30.0							Amps
Maximum instantaneous forward voltage at 1.0 A	V_F	1.10					1.20		Volts
Maximum DC reverse current T_A=25 at rated DC blocking voltage T_A=125	I_R	5 50.0							uA
Typical reverse recovery time (NOTE 1)	t_rr	2.0							s
Typical junction capacitance (NOTE 2)	C_J	15.0							pF
Typical thermal resistance (NOTE 3)	R_JA R_JL	80.0 26.0							/W
Operating junction and storage temperature range	T_J, T_STG	-65 to +175

GF1M Features

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