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GP1S196HCPSF, GP1S196HCZ0F, GP1S196HCZSF

Table of contents:
Info of GP1S196HCPSF
Info of GP1S196HCZ0F
Info of GP1S196HCZSF

GP1S196HCPSF, GP1S196HCZ0F, GP1S196HCZSF Selling Leads, Datasheet

MFG:Sharp Microelectronics Category:Sensors, Transducers Package Cooled:2008+ D/C:10000

GP1S196HCPSF, GP1S196HCZ0F, GP1S196HCZSF Datasheet download

Five Points

Part Number: GP1S196HCZ0F

Category: Sensors, Transducers

MFG: Sharp Microelectronics

Package Cooled: 2008+

D/C: 10000

Description: SENSOR OPTO SLOT 1.1MM TRANS SMD

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GP1S196HCZ0F Parameters

Technical/Catalog Information	GP1S196HCZ0F
Vendor	Sharp Microelectronics
Category	Sensors, Transducers
Sensing Distance	0.043" (1.1mm)
Sensing Method	Transmissive
Voltage - Collector Emitter Breakdown (Max)	35V
Current - Collector (Ic) (Max)	20mA
Current - DC Forward (If)	30mA
Output Configuration	Phototransistor
Response Time	50s , 50s <!--50us-->
Type	Unamplified
Mounting Type	Through Hole
Package / Case	PCB Mount
Packaging	Bulk
Operating Temperature	-25°C ~ 85°C
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	GP1S196HCZ0F GP1S196HCZ0F 425 2509 5 ND 42525095ND 425-2509-5

GP1S196HCZ0F General Description

GP1S196HCZ0F is a compact-package, photo-transistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides noncontact sensing. The compact package series is a result of unique technology combing transfer and injection molding.

This device is half the size of the rest of the parts in this family.

GP1S196HCZ0F Maximum Ratings

Forward current I_F...............................30 mA
Reverse voltage V_R.................................6 V
Power dissipation P........................... 75 mW
Collector-emitter voltage V_CEO.............35 V
Emitter-collector voltage V_ECO................ 6 V
Collector current I_C.............................20 mA
Collector power dissipation P_C ..........75 mW
Total power dissipation Ptot ............100 mW
Operating temperature Topr......−25 to +85
Storage temperature Tstg .......−40 to +100
Soldering temperature Tsol ..................260

GP1S196HCZ0F Features

1. Transmissive with phototransistor output
2. Highlights :
• Compact Size
• Low Profi le
• Narrow Gap
• Through-hole : GP1S196HCZ0F
• SMT : GP1S196HCZSF
3. Key Parameters :
• Gap Width : 1.1mm
• Slit Width (detector side): 0.3mm
• Package : 3.1×2×2.7mm
4. Lead free and RoHS directive compliant

GP1S196HCZ0F Typical Application

1. General purpose detection of object presence or motion.
2. Example : printer, lens control for camera

GP1S196HCZSF Parameters

Technical/Catalog Information	GP1S196HCZSF
Vendor	Sharp Microelectronics
Category	Sensors, Transducers
Sensing Distance	0.043" (1.1mm)
Sensing Method	Transmissive
Voltage - Collector Emitter Breakdown (Max)	35V
Current - Collector (Ic) (Max)	20mA
Current - DC Forward (If)	30mA
Output Configuration	Phototransistor
Response Time	50s , 50s <!--50us-->
Type	Unamplified
Mounting Type	Surface Mount, Gull Wing
Package / Case	4-SMD
Packaging	Bulk
Operating Temperature	-25°C ~ 85°C
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	GP1S196HCZSF GP1S196HCZSF 425 2510 5 ND 42525105ND 425-2510-5

GP1S196HCZSF General Description

GP1S196HCZSF Maximum Ratings

GP1S196HCZSF Features

GP1S196HCZSF Typical Application

1. General purpose detection of object presence or motion.
2. Example : printer, lens control for camera

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