GT5G101, GT5G102, GT5G131 TE12LQ Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:SOT252 D/C:04+
GT5G101, GT5G102, GT5G131 TE12LQ Datasheet download
Part Number: GT5G101
MFG: TOSHIBA
Package Cooled: SOT252
D/C: 04+
MFG:TOSHIBA Package Cooled:SOT252 D/C:04+
GT5G101, GT5G102, GT5G131 TE12LQ Datasheet download
MFG: TOSHIBA
Package Cooled: SOT252
D/C: 04+
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Datasheet: GT50G321
File Size: 294386 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
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PDF/DataSheet Download
Datasheet: GT5G102
File Size: 63327 KB
Manufacturer: Toshiba
Download : Click here to Download
PDF/DataSheet Download
Datasheet: GT50G321
File Size: 294386 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
Features of the GT5G102 are:(1)3rd generation;(2)high input impedance;(3)low saturation voltage:VCE(sat)=8V(max)(IC=130A);(4)enhancement mode;(5)12V gate drive.
The maximum ratings of the GT5G102 can be summarized as:(1):the characteristics is collector-emitter voltage,the symbol is VCES,the rating is 400,the unit is V;(2):the characteristics is gate-emitter voltage DC,the symbol is VGES,the rating is ±20,the unit is V;(3):the characteristics is collector current DC,the symbol is IC,the rating is 5,the unit is A;(4):the characteristics is collector current 1 ms,the symbol is ICP,the rating is 130,the unit is A;(5):the characteristics is collector power dissipation Ta = 25,the symbol is PC,the rating is 1.3,the unit is W;(6):the characteristics is collector power dissipation Tc = 25,the symbol is PC,the rating is 20,the unit is W;(7):the characteristics is junction temperature,the symbol is Tj,the rating is 150,the unit is ;(8):the characteristics is storage temperature range,the symbol is Tstg,the rating is -55 to 150,the unit is .
The electrical characteristics of the GT5G102 can be summarized as:(1):the characteristics is gate leakage current,the symbol is IGES,the Max is 10,the unit is A;(2):the characteristics is collector cut-off current,the symbol is ICES,the Max is 10,the unit is A;(3):the characteristics is gate-emitter cut-off voltage,the symbol is VGE (OFF),the Min is 2,the Max is 5,the unit is V;(4):the characteristics is collector-emitter saturation voltage,the symbol is VCE (sat),the Typ is 5,the Max is 8,the unit is V;(5):the characteristics is input capacitance,the symbol is Cies,the Typ is 1200,the unit is pF;(6):the characteristics is switching time rise time,the symbol is tr,the Typ is 0.7,the unit is s;(7):the characteristics is switching time turn-on time,the symbol is ton,the Typ is 0.9,the unit is s;(8):the characteristics is switching time fall time,the symbol is tf,the Typ is 1.7,the unit is s;(9):the characteristics is switching time turn-off time,the symbol is toff,the Typ is 2.0,the unit is s;(10):the characteristics is thermal resistance,the symbol is Rth(j-c),the Max is 6.25,the unit is /W.
Characteristics |
Symbol |
Rating |
Unit | ||
Collector-base voltage |
VCES |
400 |
V | ||
Collector-emitter voltage | DC |
VGES |
±20 |
V | |
Collector current | DC |
IC |
5 |
A | |
1 ms |
ICP |
130 |
A | ||
Collector power dissipation | Ta = 25 |
PC |
1.3 |
W | |
Tc = 25 |
PC |
20 |
W | ||
Junction temperature |
Tj |
150 |
|||
Storage temperature range |
Tstg |
−55~150 |