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The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.
H11AV2-M Maximum Ratings
Parameter
Symbol
Value
Unit
TOTAL DEVICE Storage Temperature
TSTG
-40 to +150
Operating Temperature
TOPR
-40 to +100
Wave solder temperature (see page 9 for reflow solder profiles
TSOL
260 for 10 sec
Total Device Power Dissipation @ TA = 25 Derate above 25
PD
250
mW
2.94
mW/
EMITTER DC/Average Forward Input Current
IF
60
mA
Reverse Input Voltage
VR
6
V
LED Power Dissipation @ TA = 25 Derate above 25
PD
120
mW
1.41
mW/
DETECTOR Collector-Emitter Voltage
VCEO
70
V
Collector-Base Voltage
VCBO
70
V
Emitter-Collector Voltage
VECO
7
V
Detector Power Dissipation @ TA= 25 Derate above 25
PD
150
mW
1.76
mW/
H11AV2-M Features
• H11AV1 and H11AV2 feature 0.3" input-output lead spacing • H11AV1A and H11AV2A feature 0.4" input-output lead spacing • UL recognized (File #E90700, Vol. 2) • VDE recognized (File #102497) - Add option V (e.g., H11AV1AV-M)
H11AV2-M Typical Application
• Power supply regulators • Digital logic inputs • Microprocessor inputs