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The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D1 Maximum Ratings
Parameter
Symbol
Value
Units
TOTAL DEVICE Storage Temperature
TSTG
-55 to +150
°C
Operating Temperature
T OPR
-55 to +100
°C
Lead Solder Temperature
TSOL
260 for 10 sec
°C
Total Device Power Dissipation @ TA = 25°C
PD
260
mW
Derate above 25°C
3.5
mW/°C
EMITTER *Forward DC Current
IF
80
mA
*Reverse Input Voltage
VR
6.0
V
*Forward Current - Peak (1s pulse, 300pps)
IF (pk)
3.0
A
*LED Power Dissipation @ TA = 25°C
PD
150
mW
Derate above 25°C
1.41
mW/°C
H11D1 Features
*High Voltage - H11D1, H11D2, BVCER= 300 V - H11D3, H11D4, BVCER= 200 V *High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute *Underwriters Laboratory (UL) recognized File# E90700