Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
H11G3M Maximum Ratings
Symbol
Parameter
Value
Units
TOTAL DEVICE
TSTG
TOPR
TSOL
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave Solder)
-55 to +150
-40 to +100
260 for 10 sec
PD
Total Device Power Dissipation @ TA=25
Derate Above 25
260
3.5
mW
mW/
EMITTER
IF
VR
IF(pk)
Forward Input Current
Reverse Input Voltage
Forward Current Peak (1s pulse, 300pps)
60
6.0
3.0
mA
V
A
PD
LED Power Dissipation @ TA=25
Derate Above 25
100
1.8
mW
mW/
DETECTOR
VCEO
Collector-Emitter Voltage H11G1M
H11G2M
H11G3M
100
80
55
V
PD
LED Power Dissipation @ TA=25
Derate Above 25
200
2.67
mW
mW/
H11G3M Features
High BVCEO Minimum 100V for H11G1M Minimum 80V for H11G2M Minimum 55V for H11G3M High sensitivity to low input current (Min. 500% CTR at IF = 1mA) Low leakage current at elevated temperature (Max. 100A at 80) Underwriters Laboratory (UL) recognized File # E90700, Volume 2
H11G3M Typical Application
CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer