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The H11LXM series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse shaping. The detector circuit is optimized for simplicity of operation and utilizes an open collector output for maximum application flexibility.
H11L3M Maximum Ratings
Symbol
Parameters
Value
Units
TSTG TOPR TSOL
Storage Temperature Operating Temperature Lead Solder Temperature
-55 to +150 -40 to +85 260 for 10 sec
PD
Total Device Power Dissipation @ 25
250
mW
Derate Above 25
2.94
mW/
IF VR IF(pk)
Continuous Forward Current Reverse Voltage Forward Current -Peak (1PAs pulse, 300pps
60 6 3.0
mA V A
PD
LED Power Dissipation 25 Ambien
120
mW
Derate Linearly From 25
1.41
mW/
PD
Detector Power Dissipation @ 25
150
mW
Derate Linearly from 25
2.0
mW/
VO VCC IO
V45 Allowed Range V65 Allowed Range I4 Output Current
0 to 16 3 to 16 50
V V mA
H11L3M Features
·High data rate, 1MHz typical (NRZ) ·Free from latch up and oscilliation throughout voltage and temperature ranges. ·Microprocessor compatible drive ·Logic compatible output sinks 16mA at 0.4V maximum ·Guaranteed on/off threshold hysteresis ·Wide supply voltage capability, compatible with all popular logic systems ·Underwriters Laboratory (UL) recognized- file #E90700, Volume 2 ·VDE recognized (R)C File#102497 - Add option (e.g., H11LIVM)
H11L3M Typical Application
·Logic to logic isolator ·Programmable current level sensor ·Line receiver-eliminate noise and transient problem ·A.C. to TTL conversion-square wave shapin ·Digital programming of power supplies ·Interfaces computers with peripherals