MFG:Fairchild Semiconductor Category:Sensors, Sensor Evaluation Kits Package Cooled:N/A D/C:09+
H21B5, H21B6, H21C Datasheet download
Category: Sensors, Sensor Evaluation Kits
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 09+
Description: SWITCH INTERRUPTER DARL-OUT 25MA
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PDF/DataSheet Download
Datasheet: H21B5
File Size: 382414 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: H21B6
File Size: 382414 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: H21A
File Size: 106716 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | H21B5 |
| Vendor | Fairchild Semiconductor |
| Category | Sensors, Sensor Evaluation Kits |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | H21B5 H21B5 |
The H21B4, H21B5 and H21B6 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The pack aging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an "ON" to an "OFF" state.
|
Parameter |
Symbol |
Rating |
Unit |
|
Operating Temperature |
T OPR |
-55 to +100 |
°C |
|
Storage Temperature |
T STG |
-55 to +100 |
°C |
|
Soldering Temperature (Iron) (2,3 and 4) |
T SOL-I |
240 for 5 sec |
°C |
|
Soldering Temperature (Flow) (2 and 3) |
T SOL-F |
260 for 10 sec |
°C |
|
INPUT (EMITTER) Continuous Forward Current |
IF |
50 |
mA |
|
Reverse Voltage |
VR |
6 |
V |
|
Power Dissipation (1) |
PD |
100 |
mW |
|
OUTPUT (SENSOR) Collector to Emitter Voltage |
V CEO |
55 |
V |
|
Emitter to Collector Voltage |
V ECO |
6 |
V |
|
Collector Current |
IC |
40 |
mA |
|
Power Dissipation (TC = 25°C) (1) |
PD |
150 |
mW |
| Technical/Catalog Information | H21B6 |
| Vendor | Fairchild Semiconductor |
| Category | Sensors, Sensor Evaluation Kits |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | H21B6 H21B6 |
The H21B4, H21B5 and H21B6 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The pack aging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an "ON" to an "OFF" state.
|
Parameter |
Symbol |
Rating |
Unit |
|
Operating Temperature |
T OPR |
-55 to +100 |
°C |
|
Storage Temperature |
T STG |
-55 to +100 |
°C |
|
Soldering Temperature (Iron) (2,3 and 4) |
T SOL-I |
240 for 5 sec |
°C |
|
Soldering Temperature (Flow) (2 and 3) |
T SOL-F |
260 for 10 sec |
°C |
|
INPUT (EMITTER) Continuous Forward Current |
IF |
50 |
mA |
|
Reverse Voltage |
VR |
6 |
V |
|
Power Dissipation (1) |
PD |
100 |
mW |
|
OUTPUT (SENSOR) Collector to Emitter Voltage |
V CEO |
55 |
V |
|
Emitter to Collector Voltage |
V ECO |
6 |
V |
|
Collector Current |
IC |
40 |
mA |
|
Power Dissipation (TC = 25°C) (1) |
PD |
150 |
mW |
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