HFA75MC40C, HFA80FA120, HFA80NC40 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-249AC D/C:00+
HFA75MC40C, HFA80FA120, HFA80NC40 Datasheet download
Part Number: HFA75MC40C
MFG: IR
Package Cooled: TO-249AC
D/C: 00+
HFA75MC40C, HFA80FA120, HFA80NC40
- Table of contents:
Info of HFA75MC40C
Info of HFA80FA120
Info of HFA80NC40
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About HFA75MC40C
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Datasheet: HFA75MC40C
File Size: 283765 KB
Manufacturer:
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About HFA80FA120
PDF/DataSheet Download
Datasheet: HFA80FA120
File Size: 163382 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About HFA80NC40C
PDF/DataSheet Download
Datasheet: HFA80NC40C
File Size: 197549 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
HFA75MC40C General Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
HFA75MC40C Maximum Ratings
| Parameter |
Max. |
Units | |
|
VR |
Cathode-to-Anode Voltage |
400 |
V |
|
IF @ TC = 25°C |
Continuous Forward Current |
75 |
A |
|
IF @ TC = 100°C |
Continuous Forward Current |
36 | |
|
IFSM |
Single Pulse Forward Current |
300 | |
|
IAS |
Maximum Single Pulse Avalanche Current ‚ |
5.0 | |
|
EAS |
Non-Repetitive Avalanche Energy |
1.4 |
µJ |
|
PD @ TC = 25°C |
Maximum Power Dissipation |
125 |
W |
|
PD @ TC = 100°C |
Maximum Power Dissipation |
50 | |
|
TJ |
Operating Junction and |
-55 to +150 |
°C |
|
TSTG |
Storage Temperature Range | ||
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |
HFA75MC40C Features
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Reduced Snubbing
Extensive Characterization of Recovery Parameters
HFA80FA120 General Description
The dual diode series configuration (HFA80FA120) is used for output rectification or frewheeling/ clamping operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built.
These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters.
HFA80FA120 Maximum Ratings
| Parameters |
Max |
Units | |
|
VR |
Cathode-to-Anode Voltage |
1200 |
V |
|
IF |
Continuous Forward Current, TC = 60°C Per Leg |
40 |
A |
|
IFSM |
Single Pulse Forward Current, TJ = 25°C Per Leg |
400 | |
|
IFRM |
Maximum Repetitive Forward Current, Rated VR, Square wave, 20KHz, TC = 60°C |
72 | |
|
PD |
Max Power Dissipation, TC = 100°C |
71 |
W |
| Max Power Dissipation, TC = 25°C |
178 | ||
|
VISOL |
RMS Isolation Voltage, Any Terminal to Case, t = 1 min |
2500 |
V |
|
TJ,TSTG |
Operating Junction and Storage Temperatures |
- 55 to 150 |
°C |
HFA80FA120 Features
* Fast Recovery Time Characteristic
* Electrically Isolated Base Plate
* Large Creepage Distance Between Terminal
* Simplified Mechanical Designs, Rapid Assembly
* Electrically Isolated Base Plate
* Large Creepage Distance Between Terminal
* Simplified Mechanical Designs, Rapid Assembly
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