HMS99C52SQ, HMS99C54S, HMS99C58S Selling Leads, Datasheet
MFG:HYNIX Package Cooled:PLCC44 D/C:07/08+
HMS99C52SQ, HMS99C54S, HMS99C58S Datasheet download
Part Number: HMS99C52SQ
MFG: HYNIX
Package Cooled: PLCC44
D/C: 07/08+
HMS99C52SQ, HMS99C54S, HMS99C58S
- Table of contents:
Info of HMS99C52SQ
Info of HMS99C54S
Info of HMS99C58S
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About HMS08A18-10S-DT10D
PDF/DataSheet Download
Datasheet: HMS08A18-10S-DT10D
File Size: 1317382 KB
Manufacturer: HIROSE [Hirose Electric]
Download : Click here to Download
About HMS99C54S
PDF/DataSheet Download
Datasheet: HMS99C54S
File Size: 713392 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About HMS99C58S
PDF/DataSheet Download
Datasheet: HMS99C58S
File Size: 713392 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
HMS99C54S General Description
The Flash memory increases EPROM and ROM functionality with in-circuit electrical erasure and programming. It contains 4K, 8K, 16K, 24K or 32K bytes of program memory. This memory is both parallel and serial In-System Programmable(ISP). The ISP allows devices to alter their own program memory in the actual end product under software control through UART ports. A default serial loader(bootloader) program supports ISP of the Flash memory. The programming does not require external 12V programming voltage. The necessary high programming voltage is generated on-chip using the standard VCC pins of the microcontroller.
HMS99C54S Maximum Ratings
Ambient temperature under bias (TA)...............................................................-40 to + 85
Storage temperature (TST)............................................................................-65 to + 150
Voltage on VCC pins with respect to ground (VSS) ............................................-0.5V to 6.5V
Voltage on any pin with respect to ground (VSS) ....................................-0.5V to VCC + 0.5V
Input current on any pin during overload condition........................................-10mA to +10mA
Absolute sum of all input currents during overload condition........................................|100mA|
Power dissipation .......................................................................................................200mW
Storage temperature (TST)............................................................................-65 to + 150
Voltage on VCC pins with respect to ground (VSS) ............................................-0.5V to 6.5V
Voltage on any pin with respect to ground (VSS) ....................................-0.5V to VCC + 0.5V
Input current on any pin during overload condition........................................-10mA to +10mA
Absolute sum of all input currents during overload condition........................................|100mA|
Power dissipation .......................................................................................................200mW
HMS99C54S Features
• Flash memory internal program memory.
• Default loader in Boot ROM allows programming via the serial port without the need of a user provided loader.
• Up to 64K byte external program memory if the internal program memory is disabled (EA = 0).
• Programming and erase voltage with standard 5V VCC supply.
• Read/Programming/Erase:
- Programming time per byte : 20us (TBD)
- Block erase/Total Erase time : 200ms (TBD)
- Typical programming time (32K bytes) is 10s at ISP mode (TBD)
• Parallel programming with Atmel/Philips chip compatible hardware interface to programmer
• Programmable security for the code in the Flash
• Endurance : 10,000 cycles (TBD)
• Data retention : 10 years (TBD)
• Default loader in Boot ROM allows programming via the serial port without the need of a user provided loader.
• Up to 64K byte external program memory if the internal program memory is disabled (EA = 0).
• Programming and erase voltage with standard 5V VCC supply.
• Read/Programming/Erase:
- Programming time per byte : 20us (TBD)
- Block erase/Total Erase time : 200ms (TBD)
- Typical programming time (32K bytes) is 10s at ISP mode (TBD)
• Parallel programming with Atmel/Philips chip compatible hardware interface to programmer
• Programmable security for the code in the Flash
• Endurance : 10,000 cycles (TBD)
• Data retention : 10 years (TBD)
HMS99C54S Connection Diagram
HMS99C58S General Description
The Flash memory increases EPROM and ROM functionality with in-circuit electrical erasure and programming. It contains 4K, 8K, 16K, 24K or 32K bytes of program memory. This memory is both parallel and serial In-System Programmable(ISP). The ISP allows devices to alter their own program memory in the actual end product under software control through UART ports. A default serial loader(bootloader) program supports ISP of the Flash memory. The programming does not require external 12V programming voltage. The necessary high programming voltage is generated on-chip using the standard VCC pins of the microcontroller.
HMS99C58S Maximum Ratings
Ambient temperature under bias (TA)...............................................................-40 to + 85
Storage temperature (TST)............................................................................-65 to + 150
Voltage on VCC pins with respect to ground (VSS) ............................................-0.5V to 6.5V
Voltage on any pin with respect to ground (VSS) ....................................-0.5V to VCC + 0.5V
Input current on any pin during overload condition........................................-10mA to +10mA
Absolute sum of all input currents during overload condition........................................|100mA|
Power dissipation .......................................................................................................200mW
Storage temperature (TST)............................................................................-65 to + 150
Voltage on VCC pins with respect to ground (VSS) ............................................-0.5V to 6.5V
Voltage on any pin with respect to ground (VSS) ....................................-0.5V to VCC + 0.5V
Input current on any pin during overload condition........................................-10mA to +10mA
Absolute sum of all input currents during overload condition........................................|100mA|
Power dissipation .......................................................................................................200mW
HMS99C58S Features
• Flash memory internal program memory.
• Default loader in Boot ROM allows programming via the serial port without the need of a user provided loader.
• Up to 64K byte external program memory if the internal program memory is disabled (EA = 0).
• Programming and erase voltage with standard 5V VCC supply.
• Read/Programming/Erase:
- Programming time per byte : 20us (TBD)
- Block erase/Total Erase time : 200ms (TBD)
- Typical programming time (32K bytes) is 10s at ISP mode (TBD)
• Parallel programming with Atmel/Philips chip compatible hardware interface to programmer
• Programmable security for the code in the Flash
• Endurance : 10,000 cycles (TBD)
• Data retention : 10 years (TBD)
• Default loader in Boot ROM allows programming via the serial port without the need of a user provided loader.
• Up to 64K byte external program memory if the internal program memory is disabled (EA = 0).
• Programming and erase voltage with standard 5V VCC supply.
• Read/Programming/Erase:
- Programming time per byte : 20us (TBD)
- Block erase/Total Erase time : 200ms (TBD)
- Typical programming time (32K bytes) is 10s at ISP mode (TBD)
• Parallel programming with Atmel/Philips chip compatible hardware interface to programmer
• Programmable security for the code in the Flash
• Endurance : 10,000 cycles (TBD)
• Data retention : 10 years (TBD)
HMS99C58S Connection Diagram
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