HPLR3103, HPLR3103T, HPLU3103 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
HPLR3103, HPLR3103T, HPLU3103 Datasheet download
Part Number: HPLR3103
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
HPLR3103, HPLR3103T, HPLU3103
- Table of contents:
Info of HPLR3103
Info of HPLR3103T
Info of HPLU3103
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About HPLR3103
PDF/DataSheet Download
Datasheet: HPLR3103
File Size: 73108 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About HPL0603E-12
PDF/DataSheet Download
Datasheet: HPL0603E-12
File Size: 47027 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About HPLU3103
PDF/DataSheet Download
Datasheet: HPLU3103
File Size: 73108 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
HPLR3103 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
HPLR3103 Maximum Ratings
|
HPLR3103 |
HPLU3103 |
UNITS | ||
| Drain to Source Voltage (Note 1) |
VDSS |
30 |
V | |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) |
VDGR |
30 |
V | |
| Gate to Source Voltage |
VGS |
±16V |
V | |
| Continuous Drain Current |
ID |
52 |
A | |
| Pulsed Drain Current (Note 2) |
IDM |
390 |
A | |
| Single Pulse Avalanche Energy (Note 4) |
EAS |
240 |
mj | |
| Power Dissipation |
PD |
89 |
W | |
| Derate Above 25 |
0.71 |
W/ | ||
| Operating and Storage Temperature |
TJ, TSTG |
-55 to 150 |
||
| Maximum Temperature for Soldering | ||||
| Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
||
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
||
HPLR3103 Features
• Logic Level Gate Drive
• 52A†, 30V
• Low On-Resistance, rDS(ON) = 0.019W
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
• 52A†, 30V
• Low On-Resistance, rDS(ON) = 0.019W
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
HPLR3103 Connection Diagram
HPLU3103 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
HPLU3103 Maximum Ratings
|
HPLR3103 |
HPLU3103 |
UNITS | ||
| Drain to Source Voltage (Note 1) |
VDSS |
30 |
V | |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) |
VDGR |
30 |
V | |
| Gate to Source Voltage |
VGS |
±16V |
V | |
| Continuous Drain Current |
ID |
52 |
A | |
| Pulsed Drain Current (Note 2) |
IDM |
390 |
A | |
| Single Pulse Avalanche Energy (Note 4) |
EAS |
240 |
mj | |
| Power Dissipation |
PD |
89 |
W | |
| Derate Above 25 |
0.71 |
W/ | ||
| Operating and Storage Temperature |
TJ, TSTG |
-55 to 150 |
||
| Maximum Temperature for Soldering | ||||
| Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
||
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
||
HPLU3103 Features
• Logic Level Gate Drive
• 52A†, 30V
• Low On-Resistance, rDS(ON) = 0.019W
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
• 52A†, 30V
• Low On-Resistance, rDS(ON) = 0.019W
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
HPLU3103 Connection Diagram
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