IC61SF51218, IC61SP12832, IC61SP12832-5TQ Selling Leads, Datasheet
MFG:ICSI Package Cooled:TQFP D/C:09+
IC61SF51218, IC61SP12832, IC61SP12832-5TQ Datasheet download
Part Number: IC61SF51218
MFG: ICSI
Package Cooled: TQFP
D/C: 09+
MFG:ICSI Package Cooled:TQFP D/C:09+
IC61SF51218, IC61SP12832, IC61SP12832-5TQ Datasheet download
MFG: ICSI
Package Cooled: TQFP
D/C: 09+
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PDF/DataSheet Download
Datasheet: IC61C1024
File Size: 209087 KB
Manufacturer: ICSI [Integrated Circuit Solution Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IC61C1024
File Size: 209087 KB
Manufacturer: ICSI [Integrated Circuit Solution Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IC61C1024
File Size: 209087 KB
Manufacturer: ICSI [Integrated Circuit Solution Inc]
Download : Click here to Download
The ICSI IC61SP12832,IC61SP12836 are high-speed, lowpower synchronous static RAM designed to provide a burstable, high-performance, secondary cache for the Pentium™, 680X0™, and PowerPC™ microprocessors. It is organized as 131,072 words by 32 bits, fabricated with ICSI's advanced CMOS technology. The device integrates a 2-bit burst counter, highspeed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be from one to four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written.
BW1 controls DQa, BW2 controls DQb, BW3 controls DQc, BW4 controls DQd, conditioned by BWE being LOW. A LOW on GW input would cause all bytes to be written.
Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally by the IC61SP12832,IC61SP12836 and controlled by theADV (burst address advance) input pin.
The mode pin is used to select the burst sequence order, Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating.
Symbol | Parameter | Value | Unit |
TBIAS | Temperature Under Bias | -40 to +85 | |
TSTG | Storage Temperature | -55 to +150 | |
PD | Power Dissipation | 1.6 | W |
IOUT | Output Current (per I/O) | 100 | mA |
VIN, VOUT | Voltage Relative to GND for I/O Pins | -0.5 to VCCQ + 0.3 | V |
VIN | Voltage Relative to GND for for Address and Control Inputs | -0.5 to VCC + 0.5 | V |
VCC | Voltage on Vcc Supply Relatiive to GND | -0.5 to 4.6 | V |